Semiconductor Termination Insulator Moisture Blocking
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Solution Overview
Problem
Conventional semiconductor devices with silicon oxide and silicon nitride films fail to prevent moisture infiltration from the device end part into the interior, particularly in horizontal directions, leading to corrosion of aluminum electrodes and device failure during THB tests.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with a first insulating film having openings for metal electrodes and a second insulating film with lower moisture absorption, directly contacting the substrate from the outermost electrode to the end of the substrate, effectively blocking moisture infiltration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide film and a silicon nitride film are stacked as protective films on the surface of a semiconductor substrate, then moisture infiltration from the device surface into the device interior in the vertical direction is prevented, but moisture infiltration from the device end part into the device interior in the horizontal direction cannot be prevented
Solution Approach 1:
The patent applies local quality by providing the second insulating film (lower moisture absorption coefficient) specifically in the termination region from the outermost electrode to the end part of the semiconductor substrate, while the first insulating film covers other regions. This localized approach addresses the specific problem of horizontal moisture infiltration at the device end part without unnecessarily complicating the entire protective film structure.
Solution Approach 2:
The patent uses a composite structure of two different insulating films with different moisture absorption coefficients. The first insulating film (higher moisture absorption coefficient) and second insulating film (lower moisture absorption coefficient) are combined to provide complementary protection: the first film provides general protection while the second film specifically blocks horizontal moisture infiltration paths at the termination region.
2Reliability
If a second insulating film with lower coefficient of moisture absorption is added to cover the first insulating film and metal electrodes, then moisture infiltration from the device end part is prevented, but the device structure becomes more complex
Solution Approach 1:
The second insulating film is selectively positioned only in the termination region where horizontal moisture infiltration occurs, rather than covering the entire device surface. This localized application prevents aluminum electrode corrosion at critical areas while minimizing the increase in overall device structure complexity.
Solution Approach 2:
The protective film system is segmented into two functional zones: the first insulating film provides general protection across the device surface, while the second insulating film provides specialized moisture blocking in the termination region. This segmentation allows each film to perform its specific function efficiently without requiring both films to cover the entire surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents moisture from entering the device interior, enhancing reliability and preventing corrosion of aluminum electrodes, while maintaining production efficiency and cost-effectiveness by integrating the second insulating film with lower moisture absorption.
Implementation Method 1
a second insulating film having lower coefficient of moisture absorption than that of the first insulating film and covering the first insulating film and the plurality of metal electrodes
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate having a cell region in which a device is provided, and a termination region provided around the cell region; a first insulating film provided on the semiconductor substrate in the termination region and having a plurality of openings; a plurality of metal electrodes provided in the termination region and connected to the semiconductor substrate via the plurality of openings; and a second insulating film having lower coefficient of moisture absorption than that of the first insulating film and covering the first insulating film and the plurality of metal electrodes, wherein the second insulating film is in direct contact with the semiconductor substrate in a region from the outermost electrode of the plurality of metal electrodes to an end part of the semiconductor substrate.