Semiconductor Test Structure for Atom Probe Doping Analysis
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Solution Overview
Problem
The high evaporation pressure of metals like tungsten and copper in semiconductor structures hinders the application of atom probe tomography, as they are difficult to evaporate under typical electric fields, leading to damage of the doped layer and incomplete ion detection.
Innovation Solution
A method involving forming openings in the semiconductor structure to expose the metal layer, removing it using a controlled wet etching solution, and filling the hollow portion with a non-metallic material layer of lower evaporation pressure to create a semiconductor test structure suitable for atom probe tomography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If atom probe tomography is used to characterize semiconductor devices with tungsten, then three-dimensional structure characterization is achieved, but the high evaporation pressure of tungsten prevents effective atom separation and ion detection
Solution Approach 1:
The patent removes the metal layer (tungsten or copper) from the semiconductor structure before performing atom probe tomography. By extracting the problematic metal component that causes high evaporation pressure, the remaining semiconductor structure can be effectively characterized without interference from metals that require extremely high electric fields for evaporation.
Solution Approach 2:
The patent performs preliminary removal of the metal layer through selective etching processes before the atom probe tomography measurement. This preliminary action eliminates the harmful high evaporation pressure effect beforehand, allowing the subsequent tomography to proceed with optimal detection of doping ions and atomic structure without metal interference.
2Quantity of substance
If high electric field is applied to evaporate tungsten for atom probe tomography, then metal layer can be detected, but the doped layer is damaged and ion detection becomes incomplete
Solution Approach 1:
The patent extracts and removes the metal layer separately from the doped layer using selective etching. This separation allows the metal to be eliminated as a source of harm while preserving the doped layer, enabling reliable atom probe tomography without the need for excessively high electric fields that would damage the semiconductor structure.
Solution Approach 2:
The patent applies selective etching with different etching rates for different materials. The etching solution is designed to selectively remove metal layers while having minimal impact on the doped semiconductor layer, achieving local differentiation in material removal based on their distinct chemical properties and etching responses.
3Reliability
If metal layer is present in semiconductor structure, then device functionality is maintained, but atom probe tomography cannot effectively characterize the structure due to metal evaporation characteristics
Solution Approach 1:
The patent segments the semiconductor structure analysis into two parts: first removing and setting aside the metal layer, then performing atom probe tomography on the remaining semiconductor structure. This segmentation allows each component to be handled according to its specific requirements, maintaining device functionality understanding while enabling effective tomography characterization of the semiconductor portion.
Solution Approach 2:
The patent uses selective etching solution as an intermediary to separate the metal layer from the semiconductor structure. This intermediary chemical agent enables the differentiation and removal of metal components without directly damaging the semiconductor layer, facilitating subsequent tomography analysis.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the detection of doping ions at different levels without damage, ensuring accurate characterization of semiconductor structures by atom probe tomography, while avoiding the high electric fields required for metal evaporation.
Implementation Method 1
removing the metal layer by a reaction between a wet etching solution and a metal to form a hollow portion
Data Source
AI summary
A semiconductor test structure and a method for manufacturing the same are provided. The method for manufacturing a semiconductor test structure includes providing a semiconductor structure, which includes a doped layer and a metal layer located in the doped layer; forming at least one opening exposing the metal layer in the semiconductor structure; removing the metal layer by a reaction between a wet etching solution and the metal to form a hollow portion, in which the wet etching solution enters the semiconductor structure through the opening; and filling the hollow portion with a non-metallic material layer through the opening to form the semiconductor test structure, in which an evaporation pressure of the metal layer is greater than an evaporation pressure of the non-metallic material layer.