Semiconductor Device Test Circuit for Accurate Electrical Parameter Measurement
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Solution Overview
Problem
Existing semiconductor device testing methods face challenges in accurately measuring electrical characteristics due to the impossibility of applying a constant voltage to MOS transistors and resistors in various circuits, leading to errors in estimating the electrical parameters of actual semiconductor devices as the technology advances and devices become more integrated.
Innovation Solution
A test circuit is integrated within the semiconductor device, comprising a command control circuit, a normal circuit, and a test circuit with a test signal generator and unit testers, which generates test signals to accurately test the electrical characteristics of unit elements, such as MOS transistors and resistors, by applying test voltages and measuring currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If test patterns are formed in regions between semiconductor devices to measure electrical parameters, then electrical parameter testing can be performed, but measurement precision deteriorates because constant voltage cannot be applied to MOS transistors and resistors in various circuits
Solution Approach 1:
A dedicated test circuit is introduced as an intermediary component between the semiconductor devices and the measurement system. This test circuit includes voltage application units and current measurement units that facilitate accurate electrical parameter measurement by providing controlled test environments for MOS transistors and resistors, thereby resolving the measurement accuracy issue without requiring direct modification of the semiconductor devices themselves
2Measurement precision
If test patterns are arranged in regions between semiconductor devices, then electrical characteristics can be tested, but the available space becomes insufficient as device integration increases
Solution Approach 1:
The test circuit is merged with the semiconductor device structure by forming test patterns and test circuit elements in the same fabrication processes used for the semiconductor devices themselves. This integration approach allows electrical characteristic testing to be performed without requiring separate dedicated spaces, as the test functionality is combined with the device fabrication architecture
Solution Approach 2:
The test circuit is designed with multi-functionality to perform various electrical parameter measurements (voltage, current, resistance, capacitance) using a unified structure. This universal test platform can test different types of unit elements (MOS transistors, resistors, capacitors) without requiring separate dedicated test patterns for each component type, thereby reducing the total space required
3Measurement precision
If multiple test patterns are formed to test different unit elements, then comprehensive electrical parameter testing is achieved, but manufacturing complexity increases
Solution Approach 1:
The test circuit is segmented into functional modules, each responsible for testing specific electrical parameters or unit element types. This modular segmentation allows comprehensive testing coverage to be achieved through standardized repeating units rather than complex monolithic structures, simplifying the fabrication process while maintaining measurement comprehensiveness
Data Source
AI summary
A semiconductor device includes: a command control circuit for decoding a command signal to output a test signal and a normal control signal; a normal circuit for performing a predetermined operation in response to the normal control signal; and a test circuit for testing electrical characteristics of unit elements provided in the normal circuit in response to the test signal.