Semiconductor Test Decoder Using Post-FEOL Logic Cells

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Solution Overview

Problem

Current methods for testing semiconductor devices are inefficient in measuring the current-voltage characteristics of a large number of transistors, particularly during the Front End Of Line (FEOL) process, which hinders the detection of defects and yield improvement in semiconductor manufacturing.

Innovation Solution

A method and semiconductor device that form a decoder using existing logic cells and elements after the FEOL process, connecting it to transistors, and using pads to select and measure the electrical characteristics of individual transistors, allowing for efficient testing of multiple transistors on a chip.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If three pads are used to measure DC characteristic of a transistor, then the measurement can be performed, but the number of transistors that can be tested is limited

Engineering Contradiction:
ImproveDC characteristic measurementVSAvoidnumber of transistors tested
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The chip is divided into multiple regions with each region containing a subset of transistors that can be independently selected and measured. The selection logic segments the transistor testing into manageable groups, allowing systematic testing of large numbers of transistors through sequential selection rather than requiring all transistors to be tested simultaneously

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Selection logic circuits are introduced as intermediary components between the pads and the transistors. These selection logic circuits receive selection signals through the pads and activate specific transistors for measurement, enabling the three pads to control and measure many more transistors than the traditional one-to-one mapping approach

Inventive Principle:
Principle #24Intermediary (Mediator)

2Device complexity

If selection logic is formed using existing logic cells and elements after FEOL process, then device complexity is reduced, but manufacturing process complexity increases

Engineering Contradiction:
Improveselection logic structureVSAvoidpost-FEOL modification process
Core Design Contradiction:
Device complexityVSEase of manufacture

Solution Approach 1:

The selection logic is constructed using existing logic cells and elements that are already present on the chip after the FEOL process. By utilizing pre-existing structures rather than requiring entirely new fabrication steps, the approach reduces overall manufacturing complexity while still achieving the functionality of transistor selection

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The methodology repurposes existing logic cells and elements that would otherwise remain unused or serve different functions. By recovering and reconfiguring these existing structures as selection logic, the patent avoids adding significant manufacturing complexity while achieving device selection capability

Inventive Principle:
Principle #34Discarding and recovering

Data Source

PatentUS10026661B2Semiconductor device for testing large number of devices and composing method and test method thereof
Publication Date: 2018.07.17 SAMSUNG ELECTRONICS CO LTD
  • US10026661B2 patent drawing
  • US10026661B2 patent drawing
  • US10026661B2 patent drawing

AI summary

Provided is a method for testing a plurality of transistors of a semiconductor device. The method includes forming a plurality of elements or a plurality of logic using a Front End Of Line (FEOL) process, forming a selection logic using at least one of the plurality of elements or the plurality of logic cells, connecting the selection logic and the plurality of transistors, forming a pad for connecting an input terminal of the selection logic and drain or source terminals of the plurality of transistors, and sequentially selecting the plurality of transistors using the selection logic and measuring an electrical characteristic of selected transistors among the plurality of transistors.