Semiconductor Test Device for Alpha Particle SER Analysis
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Solution Overview
Problem
The increasing scaling of integrated circuits (ICs) leads to higher soft error rates (SER) due to alpha particle radiation, which affects IC functionality by generating electric charges that can cause errors until the next cycle, and existing technologies lack effective methods to measure and mitigate these errors efficiently.
Innovation Solution
A semiconductor test device and method that measures the energy consumption of alpha particles and calculates the soft error rate (SER) of ICs, using a radiation source and actuator to adjust distance and calculate the metal-to-dielectric ratio of the BEOL layer, with a controller analyzing data to determine optimal distances and ratios for minimizing SER.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If IC scaling continues to increase circuit density, then productivity and integration are improved, but soft error rate increases due to alpha particle radiation
Solution Approach 1:
The patent changes physical parameters by adjusting the distance between the radiation source and sample, and by optimizing the metal-to-dielectric ratio in the BEOL layer. These parameter changes allow measurement and optimization of soft error rate characteristics while maintaining high circuit density designs.
Solution Approach 2:
The patent replaces physical prototyping and testing with a computational measurement system that uses alpha particle radiation sources and automated controllers to measure and calculate soft error rates, enabling virtual optimization of IC designs against radiation effects.
2Volume of moving object
If capacitor cell size decreases to increase density, then circuit integration is improved, but sensitivity to alpha particle radiation increases
Solution Approach 1:
The patent measures and optimizes the metal-to-dielectric ratio parameter in response to decreased capacitor cell dimensions. By adjusting this ratio based on measured soft error rates at different radiation distances, the design becomes less sensitive to alpha particle radiation while maintaining small cell sizes.
3Device complexity
If existing technologies are used without specific SER measurement, then device complexity is reduced, but ability to mitigate soft errors is insufficient
Solution Approach 1:
The patent introduces an intermediary measurement system consisting of a radiation source, actuator, and controller that mediates between the IC design and radiation effects. This system enables SER measurement and optimization without requiring complex physical testing infrastructure.
Solution Approach 2:
The patent replaces complex physical testing with an automated measurement system that uses computational methods to calculate soft error rates based on measured data, reducing the need for elaborate test equipment while improving reliability assessment capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively reduces the soft error rate of ICs by determining the metal-to-dielectric ratio of the BEOL layer, optimizing the design of passivation and BEOL layers to minimize alpha particle interference, thereby improving IC reliability and performance.
Implementation Method 1
A soft error of an integrated circuit (IC) may occur due to ionized radiation such as, for example, alpha particles passing through a semiconductor element of the IC
Implementation Method 2
a cloud of pairs of holes and electrons may be generated along a path of movement of the alpha particles
Data Source
AI summary
A semiconductor test device includes an actuator holding a radiation source and adjusting a distance between the radiation source and a sample, and a controller controlling an operation of the actuator and calculating a soft error rate (SER) of the sample based on the distance between the radiation source and the sample. The controller calculates a first distance between the radiation source and the sample at which the SER of the sample becomes zero, and calculates a metal-to-dielectric ratio of the sample based on the first distance.


