Semiconductor Test Structure With Straight Path Contact Measurement
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Solution Overview
Problem
The existing test structures for measuring the resistance of bit line contacts in DRAM require multiple masks, increasing process time and causing imprecise alignment, which affects the accuracy of resistance measurement.
Innovation Solution
A semiconductor test structure with a substrate, contacts, top electrodes, and connecting lines is designed to form a straight testing path using extreme ultraviolet lithography, allowing all components to be formed in a single process step with precise alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used to form top electrodes and connecting lines, then the test structure can be formed, but the process time increases and alignment precision deteriorates
Solution Approach 1:
The patent combines the formation of top electrodes and connecting lines into a single mask step. The mask pattern includes both the top electrode regions and the connecting line regions, allowing both features to be formed simultaneously in one lithography and etching cycle, thereby eliminating the need for multiple separate mask steps and improving both alignment precision and process efficiency
2Ease of manufacture
If multiple masks are used to form top electrodes and connecting lines, then the test structure can be formed, but the device complexity increases
Solution Approach 1:
The patent merges the formation of top electrodes and connecting lines into a single integrated mask pattern. This unified approach simplifies the manufacturing process by reducing the number of separate fabrication steps, minimizing the complexity of process coordination, and making the overall manufacturing流程 more straightforward and easier to control
Data Source
AI summary
A semiconductor test structure includes a substrate, an input, an output, contacts, top electrodes, and connecting lines. The substrate includes a testing area which including some isolation areas and some active areas spaced apart by the isolation areas, in which each active area has a major axis and has a first end and a second end thereon. The input and the output are disposed at opposite sides of the testing area, in which the first ends face toward the input and the second ends face toward the output. The contacts are disposed on the active areas. The top electrodes are disposed on the contacts. The connecting lines disposed between the active areas. Adjacent two top electrodes are electrically connected by one connecting line. The active areas, the contacts, the top electrodes, and the connecting lines form a testing path that is substantially straight.