Semiconductor Test Structures for Corner Rounding Quantification

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Manufacturing-induced corner rounding in semiconductor devices leads to dimensional variations, affecting the performance of transistors and integrated circuit devices by creating non-uniform electric fields and deviating from designed dimensions.

Innovation Solution

Forming test structures on a semiconducting substrate with varying physical dimensions, including those with manufacturing-induced corner rounding, and performing electrical tests to analyze the impact of corner rounding on device performance, using reference structures to quantify and mitigate these effects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography systems are used to form semiconductor features, then manufacturing capability is achieved, but manufacturing-induced corner rounding occurs leading to dimensional variations

Engineering Contradiction:
Improvedimensional accuracyVSAvoidmanufacturing capability
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies preliminary action by forming test structures with known corner rounding characteristics before production manufacturing. These test structures are created in advance to establish baseline data that will be used to compensate for corner rounding effects in subsequent production devices, allowing the manufacturing process to proceed while maintaining dimensional accuracy through pre-established reference data

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses copying by creating reference test structures that replicate the corner rounding effects expected in production devices. These test structures serve as copies or models that exhibit the same manufacturing-induced corner rounding, allowing designers to study and compensate for the effects without affecting actual production device quality

Inventive Principle:
Principle #26Copying

2Speed

If device dimensions are reduced to increase operating speed, then transistor speed increases, but corner rounding effects become more significant

Engineering Contradiction:
Improvetransistor operating speedVSAvoiddimensional control
Core Design Contradiction:
SpeedVSManufacturing precision

Solution Approach 1:

The patent implements feedback by measuring the actual corner rounding in test structures and using this measured data to adjust and compensate for dimensional variations in production device design. The test results provide feedback information that allows designers to modify layout dimensions or other parameters to achieve the intended functional dimensions despite corner rounding

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent applies parameter changes by modifying design parameters such as layout dimensions, spacing, or other geometric parameters to compensate for the expected corner rounding effects. By changing these parameters in the design stage based on test data, the final manufactured devices achieve the desired dimensional accuracy and performance despite the rounding that occurs during manufacturing

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If test structures with varying dimensions are formed to quantify corner rounding, then measurement accuracy improves, but device complexity increases

Engineering Contradiction:
Improvecorner rounding quantification accuracyVSAvoidtest structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the test structures into multiple distinct structures, each with specific dimensional characteristics. This segmentation allows different aspects of corner rounding to be measured independently - some structures test width variations, others test area variations, and others test specific geometric parameters, enabling comprehensive quantification through multiple specialized measurements rather than one complex measurement

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS7504270B2Methods of quantifying variations resulting from manufacturing-induced corner rounding of various features, and structures for testing same
Publication Date: 2009.03.17 GLOBALFOUNDRIES US INC
  • US7504270B2 patent drawing
  • US7504270B2 patent drawing
  • US7504270B2 patent drawing

AI summary

The present invention is directed to methods of quantifying variations resulting from manufacturing-induced corner rounding of various features, and structures for testing same. In one illustrative embodiment, the method includes forming a plurality of test structures on a semiconducting substrate, each of the test structures having at least one physical dimension that varies relative to the other of the plurality of test structures, at least some of the test structures exhibiting at least some degree of manufacturing-induced corner rounding, forming at least one reference test structure, performing at least one electrical test on the plurality of test structures and on the reference test structure to thereby produce electrical test results, and analyzing the test results to determine an impact of the manufacturing-induced corner rounding on the performance of the plurality of test structures.