Semiconductor Test Structure for Stable VGAA Word Line Measurement
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Solution Overview
Problem
The narrow space between isolated word lines in vertical gate all around transistors (VGAA) makes them prone to damage during electrical property measurements, and existing methods lack efficient ways to stabilize and facilitate such measurements.
Innovation Solution
A semiconductor structure is designed with pillars spaced by first and second trenches, where conductive structures are formed below adjacent second trenches, and dielectric layers are stacked to isolate and protect the word line structure, allowing for stable electrical property measurements through a single measurement point.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If vertical gate all around transistor structure is adopted to reduce memory dimension, then integration and performance are improved, but word line structure becomes narrow and easily damaged during measurement
Solution Approach 1:
The patent applies beforehand cushioning by introducing protective structures (dielectric layers and support structures) around the word line structure before measurement processes. These protective elements cushion and protect the narrow word line from mechanical damage during subsequent measurement operations, resolving the contradiction between achieving high integration and maintaining structural reliability.
Solution Approach 2:
The patent uses intermediary structures such as dielectric layers and isolation structures that mediate between the narrow word line structure and external measurement equipment. These intermediaries protect the vulnerable word line while allowing electrical measurements to proceed, thus maintaining both integration benefits and measurement reliability.
2Productivity
If word lines are isolated from each other in VGAA transistor, then vertical gate all around structure is achieved, but measurement damage risk increases
Solution Approach 1:
The patent employs thin film dielectric layers that conformally coat the isolated word line structures. These thin films provide protective coverage while maintaining the isolated architecture of the VGAA transistor, preventing measurement damage without compromising the structural efficiency needed for high productivity.
3Volume of moving object
If narrow word line structure is used in VGAA, then memory dimension is reduced, but structural damage during measurement occurs
Solution Approach 1:
The patent creates composite structures by combining the narrow word line material with protective dielectric materials and support structures. This composite approach maintains the small memory dimension achieved through narrow word lines while adding protective layers that significantly enhance structural strength and prevent measurement-induced damage.
Data Source
AI summary
Provided is a semiconductor structure, a test structure, a manufacturing method and a test method. The semiconductor structure includes a substrate, which includes multiple pillars spaced along a first direction by first trenches; second trenches formed at opposite sides along a second direction of each of the pillars; target conductive structures extending along the second direction in the substrate directly below adjacent second trenches; and a first dielectric layer, a conductive layer and a second dielectric layer sequentially stacked in the first trenches and the second trenches. A depth of the first trenches is greater than that of the second trenches. The first direction intersects the second direction.