Semiconductor Device With Multi-Gate TFET and High-k Dielectric Layers
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Solution Overview
Problem
Conventional semiconductor devices, such as memory devices, face challenges with size and energy efficiency due to the significant space occupation and power consumption of multiple transistors in each memory cell.
Innovation Solution
A semiconductor device with a tunnel field-effect transistor (TFET) structure is designed, incorporating high-k dielectric layers and a specific gate member configuration, which includes multiple gate portions and dielectric layers to optimize performance and reduce power consumption while minimizing size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple transistors are used in each memory cell, then the memory device can store data, but the device occupies significant space and consumes significant power
Solution Approach 1:
The patent merges multiple gate structures into a single integrated gate member with multiple gate portions (first gate portion, second gate portion, third gate portion, fourth gate portion) that collectively control the same channel region. This consolidation reduces the overall footprint of the memory cell while maintaining the necessary transistor functionality for data storage.
Solution Approach 2:
The patent introduces high-k dielectric layers (first dielectric layer, second dielectric layer) with high dielectric constants (≥3.9, preferably ≥20) to increase storage capacitance in the vertical dimension. This allows achieving the required data storage capability with reduced planar area by utilizing the third dimension for capacitance enhancement.
2Reliability
If multiple transistors are used in each memory cell, then the memory device can store data, but the device consumes significant power
Solution Approach 1:
The patent changes the dielectric parameter by introducing high-k dielectric materials with dielectric constants ≥3.9 (preferably ≥20) in the first and second dielectric layers. This parameter change increases storage capacitance, allowing for lower operating voltages and reduced power consumption while maintaining data storage reliability.
3Duration of action of stationary object
If high-k dielectric layers are used to increase storage capacitance, then charge retention time improves, but device complexity increases
Solution Approach 1:
The patent designs the gate member to serve multiple functions simultaneously: the first gate portion and fourth gate portion provide primary gate control, the second gate portion provides additional control capability, and the high-k dielectric layers provide both electrical isolation and capacitance enhancement. This multi-functionality achieves improved charge retention without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves high operation efficiency, low power consumption, and small size, with high-k dielectric layers enabling large storage capacitance and satisfactory charge retention time, optimizing both TFET and MOSFET structures.
Implementation Method 1
At least one of a dielectric constant of the first dielectric layer and a dielectric constant of the second dielectric layer may be greater than or equal to 3.9. At least one of the dielectric constant of the first dielectric layer and a dielectric constant of the second dielectric layer may be greater than or equal to 20.
Data Source
AI summary
A semiconductor device may include the following elements: a first doped region; a second doped region, which contacts the first doped region; a third doped region, which contacts the first doped region; a first dielectric layer, which contacts the above-mentioned doped regions; a first gate member, which is conductive and comprises a first gate portion, a second gate portion, and a third gate portion, wherein the first gate portion contacts the first dielectric layer, wherein the second gate portion is positioned between the first gate portion and the third gate portion, and wherein a width of the second portion is unequal to a width of the third gate portion; a doped portion, which is positioned between the third gate portion and the third doped region; a second gate member; and a second dielectric layer, which is positioned between the third gate portion and the second gate member.