Semiconductor Structure With Thermal Backside Core

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Solution Overview

Problem

Mobile power amplifiers face challenges in heat dissipation due to increasing thermal densities and series insertion loss, which are exacerbated by shrinking die and package sizes, leading to undesirable increases in thermal resistance and costs.

Innovation Solution

A semiconductor structure with a recessed thermally conductive core and heat sink configuration that reduces thermal resistance by minimizing the thickness of the semiconductor die substrate beneath the active devices and using a thermally conductive core in the recess, while maintaining mechanical rigidity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If the power amplifier die thickness is minimized to reduce thermal resistance, then thermal resistance is reduced, but yield loss increases due to thin wafer handling and breakage

Engineering Contradiction:
Improvethermal resistanceVSAvoidyield loss
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent introduces a recess in the die substrate that extends downward, creating a third-dimensional thermal pathway. This allows the thermal conduction path to extend vertically into the recess rather than relying solely on minimizing the horizontal thickness of the die substrate, thus reducing thermal resistance without compromising mechanical integrity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs a composite structure combining the die substrate, recess formation, and thermal conduction path materials. The recess may be filled with thermally conductive materials or left as a cavity to enhance heat dissipation, creating a multi-material system that optimizes both thermal performance and mechanical strength

Inventive Principle:
Principle #40Composite materials

2Loss of energy

If the output area occupied by the power transistor is increased to reduce thermal resistance, then thermal resistance is reduced, but the overall power amplifier die area and package size increase

Engineering Contradiction:
Improvethermal resistanceVSAvoiddie area
Core Design Contradiction:
Loss of energyVSArea of stationary object

Solution Approach 1:

The patent utilizes vertical space by creating a recess in the die substrate. This allows the thermal management solution to extend in the vertical dimension rather than requiring increased horizontal area, thereby reducing thermal resistance without increasing the overall die footprint or package size

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Area of stationary object

If the power amplifier die size is reduced to decrease package size, then package size is reduced, but thermal density increases leading to worse heat dissipation

Engineering Contradiction:
Improvepackage sizeVSAvoidthermal density
Core Design Contradiction:
Area of stationary objectVSLoss of energy

Solution Approach 1:

By creating a recess that extends vertically into the die substrate, the patent provides an additional thermal conduction pathway in the vertical dimension. This allows effective heat dissipation from a compact, small-area die by utilizing the third dimension for thermal management rather than requiring larger horizontal area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration significantly reduces thermal resistance and improves heat dissipation efficiency, allowing for smaller, lower-cost power amplifier designs without compromising mechanical strength.

Implementation Method 1

A semiconductor structure with a recessed thermally conductive core and heat sink configuration that reduces thermal resistance

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS9881847B2Semiconductor structure having thermal backside core
Publication Date: 2018.01.30 AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE LTD
  • US9881847B2 patent drawing
  • US9881847B2 patent drawing
  • US9881847B2 patent drawing

AI summary

A semiconductor structure includes a semiconductor substrate having a recess disposed beneath a semiconductor device. The semiconductor structure also includes a thermally conductive core disposed in the recess, and a package substrate including a heat sink. The heat sink is in thermal contact with the thermally conductive core.