Semiconductor Thermal Imaging for Internal Bond Defect Detection

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Solution Overview

Problem

Existing semiconductor inspection technologies struggle to accurately detect internal defects in stacked semiconductor chips and bonding regions due to indirect sensing methods, which limits the ability to ensure miniaturization, increased performance, and reliability.

Innovation Solution

An inspection device utilizing electromagnetic waves to penetrate semiconductor devices and generate thermal images, combined with image processing to enhance defect detection accuracy by directly sensing thermal reactions within the devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If indirect sensing methods are used for inspection, then device complexity is reduced, but measurement precision deteriorates

Engineering Contradiction:
Improvedefect detection accuracyVSAvoidinspection system complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent introduces an electromagnetic wave (infrared radiation) as an intermediary to indirectly measure internal temperature distribution. The electromagnetic wave penetrates the semiconductor device, interacts with internal structures and defects, and carries thermal information to the detector, enabling non-contact, non-destructive inspection with high precision without complex internal sensors

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent replaces direct mechanical or electrical sensing methods with optical/thermal sensing using infrared cameras. Instead of inserting physical sensors into the device, the system uses electromagnetic radiation to detect thermal signatures, simplifying the inspection system while improving measurement capability for internal defects

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If electromagnetic waves are used to penetrate and generate heat, then measurement precision improves, but use of energy increases

Engineering Contradiction:
Improveinternal defect detection accuracyVSAvoidenergy consumption for heating
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The inspection system uses periodic pulsed infrared radiation rather than continuous illumination. The electromagnetic waves are emitted in controlled pulses, allowing the device to cool between pulses and reducing overall energy consumption while maintaining sufficient thermal contrast for defect detection during the measurement window

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The system exploits thermal phase transitions and heat diffusion patterns within the semiconductor device. By detecting subtle temperature variations and thermal wave propagation, the system achieves high-precision defect detection with minimal energy input, as the natural thermal response of materials provides the measurement signal

Inventive Principle:
Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Accurately detects internal defects such as voids and cracks by directly sensing thermal reactions, improving the reliability and performance of semiconductor packages.

Implementation Method 1

a heat generating unit which generates heat on the second face of the semiconductor device, by emitting electromagnetic waves that penetrate through the semiconductor device

Methodology Applied
Scientific EffectElectromagnetic radiation penetration and absorption: Absorption (EM radiation)

Implementation Method 2

a thermal image capturing unit which generates image data about a temperature of the second face of the semiconductor device

Methodology Applied
Scientific EffectThermal radiation detection: Thermal Radiation

Data Source

PatentUS20250210387A1Semiconductor device inspection device and semiconductor device inspection method
Publication Date: 2025.06.26 SAMSUNG ELECTRONICS CO LTD
  • US20250210387A1 patent drawing
  • US20250210387A1 patent drawing
  • US20250210387A1 patent drawing

AI summary

An inspection device of a semiconductor device includes: a semiconductor device which has a first face and a second face that are opposite to each other; and a measuring device which faces the first face, and measures heat of the semiconductor device, wherein the measuring device includes: a heat generating unit which generates heat on the second face of the semiconductor device, by emitting electromagnetic waves that penetrate through the semiconductor device; and a thermal image capturing unit which generates image data about a temperature of the second face of the semiconductor device.