Semiconductor Package Thermal Bridge for Hotspot Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor packages face challenges in heat dissipation, leading to thermal hotspots and reduced reliability due to limited heat transfer efficiency in existing packaging technologies.
Innovation Solution
A heat dissipation system is implemented using thermally conductive materials for heat transfer features and bridges, which are bonded to semiconductor devices and extend into substrates, providing pathways to transfer heat to a heat sink, enhancing efficiency and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional packaging technologies are used, then device integration is achieved, but heat dissipation efficiency is insufficient leading to thermal hotspots
Solution Approach 1:
The heat dissipation system is segmented into multiple functional components: heat transfer features extending into the substrate, heat transfer bridges connecting to the heat sink, and thermally conductive material distributed throughout. This segmentation allows optimized heat flow paths from the semiconductor device through the substrate to the heat sink, resolving the contradiction by creating dedicated thermal management pathways without compromising device integration.
Solution Approach 2:
The patent introduces thermally conductive material as an intermediary substance between the semiconductor device and the heat sink. This intermediary fills thermal pathways and enhances heat transfer efficiency, directly addressing the heat dissipation problem while maintaining the integrated package structure. The thermally conductive material acts as a mediator that improves thermal coupling without requiring separate cooling systems.
2Temperature
If heat transfer pathways are added to improve heat dissipation, then thermal management improves, but device complexity increases
Solution Approach 1:
The heat dissipation components are merged with the existing package substrate and semiconductor device structure. The heat transfer features are formed within the substrate itself, and the heat transfer bridges are integrated into the package architecture rather than being separate attachments. This merging approach improves heat dissipation while minimizing the increase in overall device complexity by utilizing existing structural elements.
Solution Approach 2:
The substrate serves multiple functions: it provides mechanical support for the semiconductor device, enables electrical connections, and now also serves as a pathway for heat transfer through the integrated heat transfer features. This multi-functionality reduces the need for separate dedicated heat dissipation structures, thereby improving thermal management without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system effectively dissipates heat generated by semiconductor devices, improving the long-term reliability and efficiency of semiconductor packages by providing efficient heat transfer pathways to a heat sink.
Implementation Method 1
The heat transfer features comprise thermally conductive material, and are disposed on and may extend into substrates of the first semiconductor device and the second semiconductor device
Data Source
AI summary
A semiconductor package including a thermally conductive bridge and a method of forming are provided. The semiconductor package may include a first semiconductor device having a first substrate and first contact pads on the first substrate, a first thermally conductive feature on the first substrate and extending into the first substrate, a second semiconductor device over the first substrate, wherein the second semiconductor device may include second contact pads electrically connected to the first contact pads, a first thermally conductive bridge over the first semiconductor device and beside the second semiconductor device, and a first encapsulant over the first semiconductor device and along sidewalls of the second semiconductor device and the first thermally conductive bridge. The first thermally conductive bridge may include a second substrate and a second thermally conductive feature on the second substrate and extending into the second substrate, wherein the second thermally conductive feature may be bonded to the first thermally conductive feature.