Semiconductor Structure Thermal Conductive Features

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Solution Overview

Problem

The semiconductor industry faces challenges in further reducing the physical size of semiconductor devices while maintaining performance, particularly in heat transfer and signal transmission, as existing bonding processes for stacked semiconductor devices are limited in efficiency and creativity.

Innovation Solution

The implementation of a stacked semiconductor device structure with hybrid bonding interfaces, including dielectric-to-dielectric and metal-to-metal bonding, and the use of thermal conductive features made from high thermal conductivity materials like copper, along with signal transmission features, to enhance heat transfer and signal transmission between semiconductor dies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If stacked semiconductor devices are used to reduce physical size, then integration density is improved, but heat dissipation becomes more difficult

Engineering Contradiction:
Improveintegration densityVSAvoidheat dissipation
Core Design Contradiction:
Quantity of substanceVSTemperature

Solution Approach 1:

The patent implements a stacked semiconductor device structure where multiple semiconductor dies are vertically stacked and bonded together, with each die containing functional circuits. This nesting approach increases integration density by utilizing the third dimension (vertical stacking) rather than expanding horizontally, directly addressing the contradiction between compact size and heat dissipation challenges

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent introduces dedicated thermal conductive features (thermal vias, thermal pads, and thermal routing structures) as intermediary elements between the semiconductor dies and the heat sink. These thermal conductive features, made from materials with high thermal conductivity, serve as mediators to efficiently conduct heat away from the stacked dies, resolving the heat dissipation difficulty while maintaining the compact stacked structure

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If bonding processes are simplified to reduce manufacturing complexity, then ease of manufacture is improved, but bonding reliability deteriorates

Engineering Contradiction:
Improvebonding process complexityVSAvoidbonding reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent performs preliminary preparation of bonding interfaces by forming interconnect structures, dielectric layers, and thermal conductive features on each semiconductor die before the stacking and bonding process. This preliminary action ensures that all necessary structures are pre-configured, making the actual bonding process simpler while maintaining high reliability through pre-validated interface designs

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent designs the bonding interface structures to serve multiple functions simultaneously: the dielectric layers provide both electrical insulation and mechanical support, while the interconnect structures provide both electrical connection and thermal conduction pathways. This multi-functionality reduces the number of separate components needed, simplifying manufacturing while ensuring reliable electrical and thermal performance

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach significantly improves heat dissipation and signal transmission efficiency, allowing for more compact and high-performance semiconductor devices with enhanced integration density.

Implementation Method 1

a thermal conductive feature penetrating through the dielectric layer... made from high thermal conductivity materials like copper... to enhance heat transfer

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20220293540A1Semiconductor structure and method of fabricating the same
Publication Date: 2022.09.15 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20220293540A1 patent drawing
  • US20220293540A1 patent drawing
  • US20220293540A1 patent drawing

AI summary

A semiconductor structure including a semiconductor substrate, an interconnect structure disposed over the semiconductor substrate, and a bonding structure disposed over the interconnect structure is provided. The bonding structure includes a dielectric layer covering the interconnect structure, signal transmission features penetrating through the dielectric layer, and a thermal conductive feature penetrating through the dielectric layer. The thermal conductive feature includes a thermal routing and thermal pads, and the thermal pads are disposed on and share the thermal routing.