Semiconductor Thermal Contact via Joining Agent
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Solution Overview
Problem
Existing methods for thermally contacting laser diode bars face challenges such as mechanical stress, reduced optical power homogeneity, and insufficient thermal conductivity, particularly when using soldering with thermally mismatched materials, which affects electro-optical conversion efficiency and introduces compressive stress.
Innovation Solution
A method involving metal layer-supported clamping with externally applied forces and a joining agent, where the metallic layers do not melt, allowing for low-stress, high-conductivity thermal contact using heat-conducting bodies with expansion coefficients matched to the semiconductor material, ensuring reliable and homogeneous optical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If soldering with copper heat-conducting body is used, then thermal conductivity is improved, but mechanical stress increases due to thermal expansion mismatch
Solution Approach 1:
A joining agent layer is introduced as an intermediary between the copper heat-conducting body and the semiconductor component arrangement. This joining agent has a thermal expansion coefficient matched to the semiconductor material, acting as a buffer that absorbs expansion differences during temperature changes, thereby reducing mechanical stress while maintaining good thermal contact.
Solution Approach 2:
The connection structure uses a composite approach combining copper (for high thermal conductivity) with a joining agent material (for matched thermal expansion). This composite structure allows the copper to provide excellent heat conduction while the joining agent layer compensates for thermal expansion mismatch, resolving the contradiction between thermal performance and mechanical stress.
2Stress or pressure
If non-positive connection without solder is used, then mechanical stress is reduced, but thermal conductivity becomes insufficient
Solution Approach 1:
The joining agent serves as a mediator that enables effective thermal contact without requiring high-temperature soldering processes. It provides sufficient thermal conductivity for efficient heat transfer while avoiding the high thermal expansion coefficients associated with traditional soldering materials, thus maintaining low mechanical stress.
3Ease of manufacture
If non-positive connection is used, then soldering process is simplified, but fastening means are required to maintain connection
Solution Approach 1:
The joining agent provides self-sufficient connection functionality, eliminating the need for separate fastening means. The material properties of the joining agent (adhesion, mechanical interlocking, or phase change upon curing) enable it to maintain the connection between components autonomously, simplifying the overall device structure while ensuring reliable thermal and electrical contact.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method achieves comparable electro-optical conversion efficiency to soldering while reducing mechanical stress and enhancing optical power homogeneity, eliminating the need for fastening means and allowing the use of cost-effective, high-thermal-conductivity materials like copper.
Implementation Method 1
wherein the material connection is achieved by solidifying the joining agent
Implementation Method 2
A force that is oriented from one of the two heat-conducting bodies towards the other is generated
Implementation Method 3
a first heat-conducting body, (iii) at least one second heat-conducting body
Data Source
Figure 1a~1b
Figure 1c~1d
Figure 1e~1f
AI summary
The invention relates to thermally contacting a semiconductor component arrangement (10 / 40), wherein at least one (20 / 30) of two heat conducting bodies (20, 30) disposed on opposite sides of the semiconductor component arrangement (10 / 40) is brought into contact with a contact surface (12 / 46) of the semiconductor component arrangement (10 / 40) by means of a metal layer (52) under the application of a force (53), wherein the metal layer (52) melts during solidification of a locking agent, forming an adhesive bond between the two heat transfer bodies (20, 30) over the entire region thereof.