Semiconductor Device Structure With Thermal Diffusion Zones
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Solution Overview
Problem
The increasing complexity and miniaturization of semiconductor integrated circuits (ICs) lead to more challenging fabrication processes, requiring innovative solutions to manage thermal diffusion and dopant activation for achieving uniform transistor and resistor performance across ICs.
Innovation Solution
The use of annular and pillar structures with varying thermal diffusion coefficients, formed through specific deposition and patterning processes, to create 'hot' and 'cold' zones on semiconductor substrates, allowing for uniform dopant activation and differing threshold voltages or resistances for transistors and resistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If functional density is increased to improve production efficiency and lower costs, then manufacturing productivity improves, but fabrication process complexity increases making uniform dopant activation difficult
Solution Approach 1:
The patent applies local quality by creating regions with different thermal diffusion coefficients within the semiconductor structure. Annular structures with materials having different thermal properties are formed around device regions, allowing localized thermal management during annealing processes. This enables uniform dopant activation across the wafer despite increased device density, as each region can be thermally optimized independently.
2Area of stationary object
If geometric size is decreased to increase functional density, then area utilization improves, but thermal diffusion control becomes more difficult affecting dopant activation uniformity
Solution Approach 1:
The patent segments the semiconductor structure into distinct thermal zones using annular structures made of materials with different thermal diffusion coefficients. These segmented regions allow independent thermal control during annealing, ensuring that even as geometric sizes decrease and devices are packed more densely, each region maintains proper thermal conditions for uniform dopant activation.
3Manufacturing precision
If annular structures with different thermal diffusion coefficients are formed to create hot and cold zones, then dopant activation uniformity improves, but device structure complexity increases
Solution Approach 1:
The annular structures serve multiple functions: they act as thermal management elements to create hot and cold zones for uniform dopant activation, while also serving as isolation structures between device regions. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in overall device complexity while achieving improved dopant activation uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables transistors and resistors on the same wafer or chip to have distinct threshold voltages or resistances, facilitating different functions and improving manufacturing efficiency by maintaining uniform dopant activation and reducing resistance variations.
Implementation Method 1
annular structures with different thermal diffusion coefficients to create 'hot' and 'cold' zones on semiconductor substrates
Implementation Method 2
allowing for uniform dopant activation
Data Source
AI summary
Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate having a first device region and a second device region. The semiconductor device structure further includes first devices in the first device region and second devices in the second device region. The semiconductor device structure also includes a first annular structure continuously surrounding the first device region and a second annular structure continuously surrounding the second device region. The first annular structure has a first thermal diffusion coefficient less than a second thermal diffusion coefficient of the second annular structure.