Semiconductor Power Package With Separate Thermal and Electrical Paths
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Solution Overview
Problem
High-power semiconductor components face challenges in heat dissipation due to ineffective transfer of heat from resin materials, leading to potential damage from high temperatures, especially in products with operating powers over 100 watts.
Innovation Solution
A semiconductor power device featuring a ceramic-metal composite circuit substrate with separate thermal and electrical pathways, utilizing a ceramic insulating layer, electric-conducting metal pads, and thermal-conducting metal pads to facilitate efficient heat dissipation through a metal thermal-conducting layer, preventing current interference with heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If resin materials are used for packaging high-power semiconductor components, then the packaging structure is simple and easy to manufacture, but heat dissipation efficiency is poor leading to high temperature damage
Solution Approach 1:
The patent employs a composite packaging structure combining ceramic substrates with metal thermal-conducting layers. The ceramic substrate provides electrical insulation and structural support, while the metal layers (such as copper or aluminum) provide efficient thermal conduction pathways. This composite approach resolves the contradiction by achieving both manufacturability and superior heat dissipation performance, enabling the package to handle high-power applications effectively.
Solution Approach 2:
The patent introduces dedicated thermal-conducting metal layers as intermediary elements between the semiconductor chip and the external environment. These metal layers act as thermal mediators that efficiently transfer heat away from the chip without interfering with electrical signals. This intermediary structure enables effective heat dissipation while maintaining the simplicity of the overall packaging approach.
2Temperature
If thermal-conducting metal layers are added to improve heat dissipation, then heat dissipation efficiency is enhanced, but device complexity increases
Solution Approach 1:
The patent merges multiple functions into the packaging structure: the ceramic substrate simultaneously provides electrical insulation, mechanical support, and serves as a base for thermal management. The thermal-conducting metal layers are integrated directly into the substrate design, combining structural and thermal management functions. This merging approach enhances heat dissipation while minimizing the increase in device complexity.
Solution Approach 2:
The ceramic substrate with integrated metal layers serves multiple purposes: electrical insulation, mechanical support, and thermal conduction. This multi-functional design resolves the contradiction by achieving effective heat dissipation without proportionally increasing complexity, as the same structural elements perform multiple functions simultaneously.
3Temperature
If separate thermal and electrical pathways are implemented, then heat dissipation efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating thermally conductive regions (metal layers) in specific locations where heat needs to be extracted, while maintaining electrical insulation in other areas. The thermal-conducting metal pads are strategically positioned to contact the chip's thermal path without creating electrical short circuits. This localized approach enables effective pathway separation with manageable manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly enhances heat dissipation efficiency, preventing overheating and damage to high-power semiconductor components, making them suitable for high-voltage, high-current, and high-wattage applications.
Implementation Method 1
a metal thermal-conducting layer disposed on the substrate
Implementation Method 2
a ceramic insulating layer has a first side and a second side opposite to the first side
Data Source
AI summary
A semiconductor power device includes a ceramic-metal composite circuit substrate, a flip chip and a metal thermal-conducting layer. The ceramic-metal composite circuit substrate includes first electric-conducting metal pads and a first thermal-conducting metal pad. The first thermal-conducting metal pad is not electrically connected to the first electric-conducting metal pads. The flip chip includes electric-conducting pads and a floating thermal-conducting metal pad. The electric-conducting pads are electrically connected to the first electric-conducting metal pads. The floating thermal-conducting metal pad is not electrically connected to the electric-conducting pads. The metal thermal-conducting layer is disposed on the flip chip.


