Semiconductor Device Thermal Equalization via Localized Resistance
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving thermal equalization among various elements such as power semiconductors, diodes, and terminals, leading to inadequate cooling and potential damage due to uneven heat distribution.
Innovation Solution
The semiconductor device incorporates a power semiconductor array and a diode array with specific resistance values and configurations, where the third power semiconductor and diode have higher resistance values, allowing for efficient heat transfer and equalization among elements, thereby extending the life cycles of IGBTs and diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional semiconductor devices arrange multiple elements on a substrate, then device functionality is improved, but thermal equalization among elements deteriorates
Solution Approach 1:
The patent applies local quality by creating different resistance characteristics in different regions of the semiconductor device. Specifically, the semiconductor elements are designed with varying resistance values - elements at positions prone to higher temperatures are given higher resistance to reduce current and heat generation, while elements at cooler positions have lower resistance. This localized differentiation of electrical properties achieves thermal equalization across the device while maintaining overall functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures thermal equalization among elements, reducing heat generation and preventing overheating, which in turn extends the life cycles of IGBTs and diodes, leading to reduced maintenance costs in applications like hybrid vehicles and wind turbine generators.
Implementation Method 1
A resistance value between an emitter electrode and a collector electrode in ON state is higher at the third power semiconductor than at the first power semiconductor and at the second power semiconductor
Data Source
AI summary
A semiconductor device includes a power semiconductor array including a first power semiconductor located on one end of the power semiconductor array, a second power semiconductor located on the other end and a third power semiconductor located between the first and second power semiconductors and a diode array including a first diode located on one end of the diode array, a second diode located on the other end and a third diode located between the first and second diodes. A resistance value between an emitter electrode and a collector electrode in ON state is higher at the third power semiconductor than at the first and second power semiconductors. Upon application of a voltage of not less than a rising voltage, the third diode has a higher resistance value than resistance values of the first diode and the second diode upon application of a voltage not less than a rising voltage.