Semiconductor Device With Thermal Expansion Matched Cap Body

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Solution Overview

Problem

Semiconductor devices with environmental sensors face stress issues due to differing coefficients of thermal expansion and external forces, which can affect accuracy and package height, making them unsuitable for mobile devices.

Innovation Solution

A semiconductor device design featuring a substrate body with an environmental sensor and a cap body of similar thermal expansion material, connected via a bonding material with a gas channel, reducing stress and package height while maintaining accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thick glue layers or thick ceramic substrates are used to avoid additional stress, then stress protection is improved, but device thickness and footprint are increased

Engineering Contradiction:
Improvestress protectionVSAvoiddevice thickness
Core Design Contradiction:
ReliabilityVSLength of moving object

Solution Approach 1:

The patent changes the material parameters by selecting a cap body material with a coefficient of thermal expansion matched to the substrate material. This parameter matching eliminates thermal stress without requiring increased thickness, resolving the contradiction between stress protection and device thinness

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure consisting of substrate, environmental sensor, and cap body as integrated layers. This composite design allows for thin individual layers while maintaining overall structural integrity and stress protection, avoiding the need for thick protective layers

Inventive Principle:
Principle #40Composite materials

2Adaptability or versatility

If the package height is reduced for mobile device integration, then adaptability is improved, but stress protection and sensor accuracy are compromised

Engineering Contradiction:
Improvemobile device integrationVSAvoidsensor accuracy
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

By changing the thermal expansion parameter matching between substrate and cap body materials, the invention achieves stress-free operation at reduced package heights, enabling mobile device integration without compromising sensor accuracy

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent introduces a bonding material as an intermediary layer between substrate and cap body. This intermediary allows for thin-layer construction while maintaining stress protection, enabling both small package height and high sensor accuracy

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design minimizes additional stress on the sensor, improves accuracy, and reduces the device's footprint by positioning the sensor in a plane of minimal stress, allowing for a thinner, more accurate, and surface-mountable package.

Implementation Method 1

The cap body and the substrate body are connected via a bonding material

Methodology Applied
Scientific EffectAdhesion: Adhesive

Implementation Method 2

at least one channel between the substrate body and the cap body connects the volume of gas with the environment of the semiconductor device such that the channel is permeable for gases

Methodology Applied
Scientific EffectPermeation: Permeation

Data Source

PatentEP3301072B1Semiconductor device and method for forming a semiconductor device
Publication Date: 2024.02.21 SCIOSENSE BV
  • EP3301072B1 patent drawingFigure 1~3C
  • EP3301072B1 patent drawingFigure 4A~6B
  • EP3301072B1 patent drawingFigure 7~8C

AI summary

A semiconductor device (10) comprises a substrate body (11), an environmental sensor (12), a cap body (13) and a volume of gas (14). The environmental sensor (12) and the volume of gas (14) are arranged between the substrate body (11) and the cap body (13) in a vertical direction (z) which is perpendicular to the main plane of extension of the substrate body (11), and at least one channel (15) between the substrate body (11) and the cap body (13) connects the volume of gas (14) with the environment of the semiconductor device (10) such that the channel (15) is permeable for gases.