Semiconductor Device Thermal Gradient Magnetization Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving fast speed and low energy consumption while maintaining high integration and reducing production costs, particularly in controlling magnetization direction for efficient information saving and transfer.
Innovation Solution
A semiconductor device with a magnetic tunnel junction and a heating element forming a thermal gradient, allowing for magnetization direction control using in-plane current, and an optical switch with a light receiving element to change temperature, thereby regulating critical current values for spin orbit torque switching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If spin-polarized current is used to control magnetization direction through magnetic tunnel junction, then magnetization switching can be achieved, but high energy consumption occurs due to the need for current to pass through all magnetic layers
Solution Approach 1:
The patent replaces the conventional spin transfer torque method (which requires current to pass through all magnetic layers) with a spin orbit torque method using a heating element. The heating element generates thermal gradient in the first electrode, which induces spin current through the spin Hall effect, thereby switching magnetization direction without requiring high current through the magnetic tunnel junction. This substitution reduces energy consumption while maintaining reliable magnetization control.
Solution Approach 2:
The patent changes the physical state of the first electrode by introducing thermal gradient through the heating element. By controlling the temperature distribution in the first electrode, the critical current value for magnetization switching is modified, enabling lower energy consumption operation. The thermal parameter becomes a control variable that adjusts the magnetization switching characteristics.
2Ease of operation
If heavy metal inducing spin current is placed close to magnetic material for spin orbit torque technique, then in-plane current supply enables magnetization switching, but device structure becomes more complex
Solution Approach 1:
The first electrode serves multiple functions: it acts as both the current supply path and the heating element for generating thermal gradient. By integrating the heating function into the existing first electrode structure, the patent avoids adding separate heavy metal layers or additional components, thereby achieving spin orbit torque switching without significantly increasing device structure complexity.
3Use of energy by moving object
If thermal gradient is formed in the first electrode to change critical current value, then low energy consumption magnetization switching is achieved, but temperature control precision must be maintained
Solution Approach 1:
The patent incorporates a light receiving element that detects the state of the magnetic tunnel junction and provides feedback information. This feedback mechanism enables precise control of the thermal gradient application, ensuring that the critical current value is adjusted to the appropriate level for low energy consumption switching while maintaining the required temperature control precision.
4Productivity
If high integration is achieved to improve performance and reduce production cost, then device density increases, but thermal management becomes more difficult
Solution Approach 1:
The patent applies thermal gradient locally to the first electrode rather than heating the entire device structure. The heating element is positioned to create a localized thermal field that affects only the critical region for magnetization switching. This localized thermal management approach enables high integration density while maintaining effective temperature control in the active region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-speed information saving, recognition, and transfer with low energy consumption, facilitating high integration and reducing production costs by adjusting magnetization characteristics and critical current values, while improving device stability and thermal stability.
Implementation Method 1
a heating element to form a thermal gradient in the first electrode
Implementation Method 2
It provides information through the magnetoresistance of the device that would be changed according to the relative magnetization direction of the two different magnetic materials
Implementation Method 3
The magnetization direction of those two magnetic layers can be regulated by spin-polarized current, which is called 'spin transfer torque' wherein angular momentum possessed by electrons is delivered to magnetic moment to cause torque
Implementation Method 4
a new technique, called spin orbit torque technique, has been proposed to induce magnetization switching of a magnetic material by in-plane current supply by placing a heavy metal inducing spin current close to the magnetic material
Data Source
AI summary
Semiconductor devices and semiconductor device control methods are described. A semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.