Semiconductor Interconnect Stack With Thermal Insulating-Conductive Layer
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving efficient heat dissipation due to the limited thermal conductivity of traditional dielectric materials used in semiconductor devices, which can lead to increased temperatures and potential performance issues.
Innovation Solution
The implementation of an electrical insulating and thermal conductive layer, such as hexagonal boron nitride or aluminum nitride, is deposited over the semiconductor substrate, with a dielectric structure and a circuit layer formed to enhance thermal conductivity between the layers, facilitating improved heat dissipation through the use of high thermal conductivity materials like graphene for the conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional dielectric materials are used in semiconductor devices, then the device structure is simple and easy to manufacture, but the thermal conductivity is limited leading to poor heat dissipation
Solution Approach 1:
The patent employs composite material structures combining dielectric layers with thermally conductive materials. Specifically, it uses alternating layers of low-k dielectric material and thermally conductive material, or integrates thermally conductive filler particles within dielectric layers, creating a composite structure that simultaneously provides electrical insulation and enhanced thermal conductivity for improved heat dissipation
Solution Approach 2:
The patent applies local quality by selectively placing thermally conductive materials in specific regions where heat dissipation is most critical. This includes positioning thermally conductive layers adjacent to heat-generating components, using spin-on-glass (SOG) layers in targeted areas, and configuring thermally conductive fillers in regions requiring enhanced thermal management while maintaining standard dielectric properties in other areas
2Temperature
If high thermal conductivity materials like graphene are used, then heat dissipation efficiency is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent achieves multi-functionality by integrating layers that simultaneously provide electrical insulation, thermal conduction, and structural support. The dielectric layers serve both as electrical insulators and thermal management components, while spin-on-glass layers provide both planarization and thermal conduction, reducing the need for separate dedicated thermal management layers and simplifying the overall device structure
Solution Approach 2:
The patent modifies material parameters by adjusting the thermal conductivity, dielectric constant, and thickness of various layers to optimize performance. This includes selecting dielectric materials with specific k-values, controlling filler particle size and concentration, and tuning layer thicknesses to achieve desired thermal and electrical properties while maintaining manufacturing feasibility
3Temperature
If multiple layers with different thermal conductivities are implemented, then heat dissipation is enhanced, but the manufacturing precision requirements increase
Solution Approach 1:
The patent implements self-service mechanisms where the material properties and process parameters automatically compensate for variations. The spin-on-glass layers provide self-planarization during deposition, the thermally conductive fillers self-align during processing, and the layered structure inherently provides thermal gradients that guide heat flow, reducing the need for precise external control and minimizing manufacturing precision requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly enhances the thermal conductivity of semiconductor devices, improving heat dissipation efficiency and preventing thermal issues, while also serving as etch stop layers to facilitate the dual damascene process and metal deposition.
Implementation Method 1
an electrical insulating and thermal conductive layer is disposed over the semiconductor substrate... a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure
Data Source
AI summary
A manufacturing method of a semiconductor device includes the following steps. An electrical insulating and thermal conductive layer is formed over a semiconductor substrate. A dielectric structure is formed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. An opening is formed in the dielectric structure, wherein the opening extending through the dielectric structure and the electrical insulating and thermal conductive layer. A circuit layer is formed in the dielectric structure, wherein the circuit layer fills the opening.