Semiconductor Package Thermal Interface Layout for 3D Heat Dissipation

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Solution Overview

Problem

Semiconductor packages face challenges with heat dissipation due to their compact design, which can lead to increased operation temperatures and reduced reliability.

Innovation Solution

The implementation of a thermal interface material and a heat spreader over high-power chips within the semiconductor package, combined with an underfill layer and adhesive material, enhances heat dissipation efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If semiconductor packages are made compact to reduce area, then integration density and compactness are improved, but heat dissipation capability deteriorates

Engineering Contradiction:
Improvepackage areaVSAvoidoperation temperature
Core Design Contradiction:
Area of stationary objectVSTemperature

Solution Approach 1:

The patent transitions from two-dimensional planar heat dissipation to three-dimensional heat dissipation by stacking multiple semiconductor chips vertically and incorporating heat dissipation structures that extend in the vertical dimension, allowing heat to be dissipated through multiple pathways and surfaces rather than being confined to a single plane

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent introduces thermal interface materials and heat dissipation structures as intermediary elements between the semiconductor chips and the external environment, facilitating more efficient heat transfer from the chip junctions through dedicated thermal pathways to heat sinks or dissipation surfaces

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If heat dissipation structures are added to semiconductor packages, then heat dissipation capability is improved, but device complexity increases

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidpackage structure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent integrates heat dissipation functions with existing package structures by combining thermal interface materials with encapsulation layers, integrating heat sinks with package substrates, and merging multiple chips into stacked configurations where structural elements serve both mechanical support and thermal management functions simultaneously

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent designs package components to serve multiple functions: encapsulation layers provide both mechanical protection and thermal pathways, substrates provide both structural support and heat dissipation interfaces, and stacked chip configurations provide both increased integration density and enhanced heat distribution across multiple surfaces

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively reduces the operation temperature of the semiconductor package, eliminates hot spots, and improves the reliability and electrical performance by ensuring efficient heat dissipation.

Implementation Method 1

A thermal interface material is formed over the second semiconductor chip

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a heat spreader is formed on the thermal interface material

Methodology Applied
Scientific EffectHeat spreading: Convection

Data Source

PatentUS12266633B2Semiconductor structure and method of forming the same
Publication Date: 2025.04.01 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12266633B2 patent drawing
  • US12266633B2 patent drawing
  • US12266633B2 patent drawing

AI summary

A semiconductor structure includes a first semiconductor package, a second semiconductor package, a heat spreader and an dielectric layer. The first semiconductor package includes a plurality of first semiconductor chips and a first dielectric encapsulation layer disposed around the plurality of the first semiconductor chips. The second semiconductor package is disposed over and corresponds to one of the plurality of first semiconductor chips, wherein the second semiconductor package includes a plurality of second semiconductor chips and a second dielectric encapsulation layer disposed around the plurality of second semiconductor chips. The heat spreader is disposed over and corresponds to another of the plurality of first semiconductor chips. The dielectric layer is disposed over the first semiconductor package and around the second semiconductor package and the heat spreader.