Thermal Conductive Insulating Layer for Semiconductor Heat Dissipation
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving efficient heat dissipation due to limitations in thermal conductivity within semiconductor devices, particularly in the interconnection structures and dielectric layers.
Innovation Solution
The implementation of an electrical insulating and thermal conductive layer, such as hexagonal boron nitride or aluminum nitride, is deposited over the semiconductor substrate, with a dielectric structure and conductive elements forming a dual damascene interconnection structure to enhance thermal conductivity and facilitate heat dissipation, while also serving as etch stop layers during the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional dielectric layers and interconnection structures are used in semiconductor devices, then the device complexity and manufacturing process are simplified, but the thermal conductivity is insufficient leading to poor heat dissipation
Solution Approach 1:
The patent employs composite interconnection structures combining copper or cobalt conductive materials with dielectric layers having controlled thermal conductivity. This composite approach enables enhanced heat dissipation through the interconnection structure while maintaining electrical functionality and managing device complexity through integrated material design.
2Temperature
If the dielectric structure uses materials with high thermal conductivity, then heat dissipation is improved, but the etch stop function during manufacturing is compromised
Solution Approach 1:
The patent implements dielectric layers with spatially varying thermal conductivity properties. The dielectric structure includes regions with different thermal conductivities to simultaneously achieve heat dissipation in active areas and etch stop functionality in manufacturing-critical regions. This local differentiation allows both thermal management and manufacturing requirements to be satisfied within the same structure.
3Reliability
If conventional interconnection structures are used, then the manufacturing process is straightforward, but the thermal management capability is insufficient for high-performance devices
Solution Approach 1:
The patent designs interconnection structures that perform multiple functions simultaneously: electrical conduction, thermal conduction, and structural support. By making the interconnection structure multi-functional, the patent enhances device reliability and thermal management without proportionally increasing complexity, as the same structural elements serve multiple purposes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves the thermal conductivity of semiconductor devices, enabling more efficient heat dissipation and supporting both the dual damascene process and metal deposition, thereby enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
an electrical insulating and thermal conductive layer is disposed over the semiconductor substrate... a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer, an etch stop layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The etch stop layer includes silicon nitride and is disposed between the semiconductor substrate and the electrical insulating and thermal conductive layer. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.