Semiconductor Package Thermal Layer Characterization Using GIXRD

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Solution Overview

Problem

There is a lack of accurate and reliable thermal characterization techniques for monitoring and analyzing the thermal characteristics of thermal conductive materials during the manufacturing of semiconductor packages.

Innovation Solution

The use of grazing angle X-ray diffraction (GIXRD) characterization to analyze the crystal structure of thermal conductive layers, specifically AlN, in semiconductor packages, allowing for the prediction of thermal properties such as cross-plane thermal conductivity and thermal anisotropy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional thermal characterization techniques are used, then manufacturing process is simple, but thermal property measurement accuracy is insufficient

Engineering Contradiction:

Improvethermal property measurement accuracyVSAvoidcharacterization technique complexity

Core Design Contradiction:

Measurement precisionVSDevice complexity

Solution Approach 1:

The patent replaces direct thermal measurement methods with X-ray diffraction-based crystal structure analysis. By measuring crystal orientation and structure through GIXRD and predicting thermal properties from these measurements, the system achieves accurate thermal characterization without complex thermal testing equipment.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces crystal structure parameters as an intermediary between manufacturing process and thermal properties. Instead of directly measuring thermal conductivity, the method measures crystal orientation and structure, then uses predictive models to determine thermal properties, simplifying the measurement process while maintaining accuracy.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If thermal properties are measured after manufacturing, then measurement equipment is simple, but process adjustment capability is lost

Engineering Contradiction:

Improvein-line monitoring capabilityVSAvoidthermal property prediction accuracy

Core Design Contradiction:

ProductivityVSMeasurement precision

Solution Approach 1:

The patent performs crystal structure measurement during the manufacturing process rather than after completion. By measuring crystal orientation and structure at intermediate stages, the method enables real-time process monitoring and adjustment, allowing manufacturers to optimize thermal properties before final assembly.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent establishes a feedback loop where crystal structure measurements inform process adjustments. The measured crystal orientation and structure data are fed back to control manufacturing parameters, enabling continuous optimization of thermal conductive layer properties during production.

Inventive Principle:

Principle #23Feedback

3Measurement precision

If destructive sampling is used for thermal measurement, then measurement accuracy is high, but manufacturing yield decreases

Engineering Contradiction:

Improvethermal property measurement accuracyVSAvoidmanufacturing yield

Core Design Contradiction:

Measurement precisionVSProductivity

Solution Approach 1:

The patent replaces destructive thermal cutting or testing with non-destructive X-ray diffraction measurement. GIXRD can characterize crystal structure and predict thermal properties without damaging the sample, allowing full retention of manufactured components while achieving accurate thermal characterization.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method provides an accurate and non-destructive means to predict thermal properties of thermal conductive layers, enabling in-line monitoring and adjustment of manufacturing processes to ensure efficient heat dissipation in semiconductor packages.

Implementation Method 1

performing a grazing angle X-ray diffraction (GIXRD) characterization on the thermal conductive layer

Methodology Applied

Scientific EffectX-ray diffraction: X-Ray

Implementation Method 2

performing a grazing angle X-ray diffraction (GIXRD) characterization on the thermal conductive layer, and extracting crystal properties of the thermal conducive layer from a resulted diffractogram

Methodology Applied

Scientific EffectDiffraction: Diffraction

Data Source

PatentUS20250201633A1Thermal characterization method and manufacturing of semiconductor package

Publication Date: 2025.06.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A thermal characterization method and a method for manufacturing a semiconductor package are provided. The thermal characterization method includes: conducting preliminary experiments before manufacturing of the semiconductor structure, to establish correlations between crystal properties and thermal properties of thin film samples formed of a crystalline material identical with a crystalline material for forming the thermal conductive layer; performing a grazing angle X-ray diffraction (GIXRD) characterization on the thermal conductive layer during manufacturing of the semiconductor structure, and extracting crystal properties of the thermal conducive layer from a resulted diffractogram; and using the correlations established by the preliminary experiments to find thermal properties corresponding to the extracted crystal properties of the thermal conductive layer.