Semiconductor Thermal Dissipation Layer for Stacked Die Heat Paths
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Solution Overview
Problem
Semiconductor devices, particularly those with multi-die configurations like stacked die structures, face challenges in thermal dissipation due to limited thermal conductivity paths, which can degrade device performance and complicate manufacturing processes.
Innovation Solution
Incorporation of a thermal dissipation layer made from high thermal conductivity materials like boron nitride, aluminum nitride, graphene, or diamond-like carbon, combined with a post-deposition transient heat treatment to enhance crystallinity and orientation alignment, thereby improving thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multi-die configurations are used to increase device functionality, then device performance and sophistication are improved, but thermal dissipation capability deteriorates due to limited thermal conductivity paths
Solution Approach 1:
The patent divides the thermal management function into separate components: a thermal dissipation layer integrated within the semiconductor structure and a separate heat sink component. This segmentation allows the multi-die configuration to maintain its functional complexity while thermal dissipation is handled by dedicated thermal pathways, resolving the contradiction between device sophistication and thermal management capability.
Solution Approach 2:
The patent introduces vertical thermal pathways through the multi-die stack by integrating thermal dissipation layers between dies and utilizing through-silicon vias. This adds a vertical dimension to heat dissipation, transforming the traditional lateral heat flow into multi-directional thermal management, thereby enabling effective thermal dissipation in three-dimensional stacked configurations.
2Ease of manufacture
If conventional semiconductor structures are used, then manufacturing processes remain simple, but thermal dissipation paths are limited causing device performance degradation
Solution Approach 1:
The patent merges thermal dissipation functionality with the existing semiconductor manufacturing process by integrating thermal dissipation layers into the interconnect structure and utilizing standard fabrication techniques such as atomic layer deposition and laser annealing. This integration allows thermal management to be achieved without adding significant manufacturing complexity, maintaining ease of production while improving device performance through enhanced thermal pathways.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermal dissipation layer significantly enhances the thermal management capabilities of semiconductor structures, maintaining device performance and reducing manufacturing complexity by providing efficient heat dissipation paths without damaging underlying layers.
Implementation Method 1
a thermal dissipation layer disposed over at least a portion of the MLI structure
Implementation Method 2
annealing the thermal dissipation layer to a temperature above the threshold temperature
Data Source
AI summary
One aspect of the present disclosure pertains to a method of semiconductor device fabrication. The method includes forming a transistor on a semiconductor substrate, forming a first metal layer and an overlying second metal layer over the transistor, depositing a thermal dissipation layer over the overlying second metal layer, and annealing the thermal dissipation layer to a temperature above the threshold temperature. The depositing of the thermal dissipation layer is performed below a threshold temperature. During the annealing, the first metal layer and the overlying second metal layer are maintained below the threshold temperature.