Semiconductor Package Heat Distribution for Stacked Die Reliability

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Solution Overview

Problem

Conventional semiconductor packaging methods result in inadequate thermal dissipation, leading to thermal breakdown and reliability issues due to excess cost, large package sizes, and inefficient heat management.

Innovation Solution

The implementation of a semiconductor package design that includes an internal heat distribution layer on the top surface of the semiconductor die, extending to the side surface, and an external heat distribution layer that contacts the internal layer, enhancing thermal dissipation by stacking semiconductor devices and forming an external heat distribution layer over the package surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If conventional packaging methods are used to package several semiconductor dies together, then multiple dies can be integrated in one package, but the semiconductor dies become deeply embedded within the package resulting in inadequate thermal dissipation and thermal breakdown

Engineering Contradiction:
Improvenumber of semiconductor dies packagedVSAvoidthermal dissipation capability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent transitions from planar packaging to three-dimensional stacked packaging, where semiconductor dies are arranged in multiple layers vertically. This dimensional change allows better thermal management by exposing more die surfaces to heat dissipation structures while maintaining compact package footprint. The stacked configuration enables heat to be dissipated from multiple surfaces rather than being trapped in a deeply embedded planar arrangement.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent divides the package into distinct functional layers including first and second semiconductor dies, first and second heat dissipation structures, and intermediate structures. This segmentation allows each component to be optimized independently for its specific function - electrical performance, thermal dissipation, or mechanical support - while working together as an integrated system.

Inventive Principle:
Principle #1Segmentation

2Quantity of substance

If conventional packaging methods are used, then semiconductor dies can be packaged together, but the package size becomes too large due to inefficient heat management requirements

Engineering Contradiction:
Improvenumber of semiconductor dies packagedVSAvoidpackage size
Core Design Contradiction:
Quantity of substanceVSVolume of stationary object

Solution Approach 1:

The patent employs vertical stacking of semiconductor dies in multiple layers, utilizing the third dimension to increase packaging density. This approach accommodates more dies within a smaller footprint by arranging them vertically rather than spreading them out horizontally, thereby reducing overall package size while maintaining high die count.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent implements a nested structure where smaller components are positioned within or between larger structural elements. The heat dissipation structures are integrated within and between the die layers, with intermediate structures nested between adjacent dies. This nesting approach maximizes space utilization and reduces package volume.

Inventive Principle:
Principle #7Nested doll (Nesting)

3Quantity of substance

If conventional packaging methods are used, then semiconductor dies can be packaged together, but thermal energy accumulates leading to thermal breakdown and reliability failures

Engineering Contradiction:
Improvenumber of semiconductor dies packagedVSAvoidthermal energy dissipation
Core Design Contradiction:
Quantity of substanceVSTemperature

Solution Approach 1:

The patent divides the thermal management system into multiple discrete heat dissipation structures positioned at different locations and levels within the package. Each heat dissipation structure independently manages thermal loads from adjacent dies, preventing thermal accumulation through distributed thermal pathways rather than a single centralized approach.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces vertical thermal management pathways through stacked heat dissipation structures positioned between and around die layers. This three-dimensional thermal conduction network provides multiple escape routes for heat flow, efficiently conducting thermal energy away from die junctions in both horizontal and vertical directions to prevent thermal buildup.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively dissipates heat from the semiconductor dies, improving reliability and reducing thermal-related failures while maintaining a compact package size, thus addressing the inefficiencies of traditional packaging methods.

Implementation Method 1

an internal heat distribution layer on a top surface of the semiconductor die... and an external heat distribution layer that contacts the internal layer, enhancing thermal dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11901343B2Semiconductor device with integrated heat distribution and manufacturing method thereof
Publication Date: 2024.02.13 AMKOR TECH SINGAPORE HLDG PTE LTD
  • US11901343B2 patent drawing
  • US11901343B2 patent drawing
  • US11901343B2 patent drawing

AI summary

A semiconductor package having an internal heat distribution layer and methods of forming the semiconductor package are provided. The semiconductor package can include a first semiconductor device, a second semiconductor device, and an external heat distribution layer. The first semiconductor device can comprise a first semiconductor die and an external surface comprising a top surface, a bottom surface, and a side surface joining the bottom surface to the tope surface. The second semiconductor device can comprise a second semiconductor die and can be stacked on the top surface of the first semiconductor device. The external heat distribution layer can cover an external surface of the second semiconductor device and the side surface of the first semiconductor device. The external heat distribution layer further contacts an internal heat distribution layer on a top surface of the first semiconductor die.