Semiconductor Structure Thermal Traces for Compact Chiplet Cooling
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Solution Overview
Problem
The challenge of packaging and integrating different types of semiconductor dies or heterogeneous chiplets with other electronic devices is exacerbated by the need for improved thermal management and reliability in smaller form factors.
Innovation Solution
A manufacturing method involving the formation of thin resistive film structures and dummy resistive film patterns, stacked capacitor structures, and heat pipes to enhance thermal conductivity and dissipate heat horizontally, while maintaining electrical isolation and functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If semiconductor dies are packaged in smaller form factors, then integration density is improved, but thermal management becomes more difficult
Solution Approach 1:
The patent segments the thermal management function by introducing separate thermal traces and heat pipes that are distinct from the electrical interconnect structures. The thermal traces are formed as dedicated thermal pathways extending from hot spots to heat pipes, separating thermal conduction from electrical signal transmission. This segmentation allows independent optimization of thermal and electrical pathways in the compact package.
Solution Approach 2:
The patent introduces heat pipes as intermediary thermal management components that mediate between the semiconductor die hot spots and the external environment. The heat pipes act as thermal intermediaries that efficiently transfer heat away from the compact package, enabling better thermal management without increasing the overall form factor.
2Temperature
If thermal traces are added to dissipate heat, then thermal conductivity is improved, but device complexity increases
Solution Approach 1:
The patent merges the formation of thermal traces with existing manufacturing processes by forming thermal traces and electrical interconnect structures in the same or overlapping process steps. The thermal traces are integrated into the package structure alongside electrical components, combining thermal management functionality with existing electrical interconnect layers rather than adding completely separate structures.
Solution Approach 2:
The patent creates multi-functional structures where certain layers and materials serve both electrical and thermal functions. The interconnect structures and packaging materials are designed to simultaneously conduct electrical signals and thermal energy, reducing the need for dedicated separate components and simplifying the overall device architecture.
3Adaptability or versatility
If heterogeneous chiplets are integrated, then functionality is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies local quality by creating region-specific thermal management solutions tailored to different chiplet locations and heat generation characteristics. Thermal traces are strategically positioned and dimensioned to match local hot spot distributions of different heterogeneous chiplets, with varying trace widths, materials, and configurations optimized for each specific region's thermal requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in a significant reduction of on-chip temperature gradients by up to 20%, improving device reliability and performance.
Implementation Method 1
heat pipes to enhance thermal conductivity and dissipate heat horizontally
Implementation Method 2
formation of thin resistive film structures and dummy resistive film patterns, stacked capacitor structures, and heat pipes to enhance thermal conductivity and dissipate heat horizontally
Data Source
AI summary
A semiconductor structure includes a semiconductor die having a first region and a second region is provided. The semiconductor die includes a device layer located in the second region, an insulation material extending over the first and second regions, and metallization structures embedded in the insulation material and electrically connected with the device layer. The metallization structures include passive device structures located in the first region and thermal traces located in the second region, and the passive device structures and the thermal traces include a same material and are co-levelled. The passive device structures are electrically connected with the device layer, and the thermal traces are electrically floating.