Semiconductor Thinner Composition for EBR and Hump Height Control
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Solution Overview
Problem
Existing thinner compositions used in semiconductor manufacturing fail to provide excellent solubility for various photoresist films and spin-on hardmasks, leading to increased hump heights and reduced coating film uniformity, which affects the yield and quality of semiconductor devices.
Innovation Solution
A thinner composition comprising a propionate compound, an organic solvent with a Hansen solubility parameter by hydrogen bonding force (δh) value of 10 or more, and a lactone-based organic solvent, which improves solubility and reduces hump heights by controlling polarity and spreading evenly on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high polarity components are added to improve solubility and EBR properties, then solubility and edge bead removal improve, but hump height increases and coating film uniformity deteriorates
Solution Approach 1:
The patent adjusts the polarity parameter of the thinner composition by selecting specific solvents with controlled Hansen solubility parameters. The first solvent has δh of 8-12 and the second solvent has δh of 18-22, creating an optimized polarity balance that improves EBR while controlling hump height through precise parameter control.
Solution Approach 2:
The patent uses a composite solvent system combining two different solvents with complementary properties. The first solvent (δh: 8-12) provides base solubility while the second solvent (δh: 18-22) enhances EBR performance, creating a synergistic effect that resolves the contradiction between solubility and hump height control.
2Adaptability or versatility
If high polarity components are added to improve solubility for various photoresist films and SOHs, then solubility improves, but hump height increases reducing usable area
Solution Approach 1:
The patent optimizes the Hansen solubility parameter δh within specific ranges (first solvent: 8-12, second solvent: 18-22) to achieve universal solubility for different photoresist types while controlling the swelling behavior that causes hump formation, thereby preserving usable area.
Solution Approach 2:
The composite solvent system is designed to provide universal solubility for multiple photoresist formulations and spin-on hardmasks through the combined action of two solvents with different polarity characteristics, enabling one thinner composition to handle various resist types without increasing hump height.
3Reliability
If high polarity components are added to improve EBR properties, then edge bead removal improves, but coating film uniformity deteriorates
Solution Approach 1:
The patent precisely controls the Hansen solubility parameter δh of each solvent component (first solvent: 8-12, second solvent: 18-22) to achieve optimal EBR performance while maintaining coating film uniformity, resolving the contradiction through parameter optimization.
Solution Approach 2:
The patent employs a composite solvent system where the first solvent provides controlled solubility and the second solvent enhances EBR, creating a balanced formulation that achieves both edge bead removal and coating uniformity simultaneously through synergistic interaction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enhances edge bead removal and resist reduced coating properties, reducing hump heights and improving coating film uniformity, thereby increasing the usable area and reducing defects in semiconductor processes.
Implementation Method 1
an organic solvent with a Hansen solubility parameter by hydrogen bonding force (δh) value of 10 or more
Implementation Method 2
which can reduce hump heights and improve coating film uniformity
Data Source
AI summary
A thinner composition containing a propionate compound of a particular structure, an organic solvent with a Hansen solubility parameter by hydrogen bonding force (δh) value of 10 or more, and a lactone-based organic solvent are disclosed. The thinner composition has improved EBR and RRC properties due to excellent solubility for photoresist films and spin-on hardmasks (SOHs). The thinner composition can reduce hump heights and improve coating film uniformity.