Semiconductor Thinning Lamination to Prevent Circuit Element Cracks
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the increased likelihood of defects such as cracks and breakage in circuit elements during the thinning and peeling processes when the semiconductor substrate thickness is reduced below 20 μm, leading to a higher rate of defective semiconductor elements.
Innovation Solution
A method involving the formation of a laminated structure with an adhesive protective layer, adhesive layer, peeling layer, and support substrate on the semiconductor substrate, followed by selective thinning, bonding, peeling, and division steps, where the adhesive protective layer enhances the film strength and reduces defects by providing protection against film stress and deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the thickness of the semiconductor substrate is reduced to 20 μm or less to achieve thinning, then the miniaturization and heat dissipation performance are improved, but the strength of circuit elements is weakened and defects such as cracks and breakage increase
Solution Approach 1:
An adhesive protective layer is formed on the front surface of the semiconductor substrate before thinning to provide mechanical support and prevent cracks and breakage during subsequent processing steps. This protective layer acts as a cushioning structure that compensates for the weakened strength of thinned substrates.
Solution Approach 2:
A laminated structure comprising multiple layers (adhesive protective layer, adhesive layer, peeling layer, support substrate) is formed on the semiconductor substrate to create a composite structure that combines the advantages of different materials, providing both mechanical support and protection during processing.
2Volume of moving object
If the thickness of the semiconductor substrate is reduced to 20 μm or less to achieve thinning, then the miniaturization and heat dissipation performance are improved, but the number of defective semiconductor elements increases
Solution Approach 1:
The adhesive protective layer is formed in advance to prevent defects during thinning and subsequent processing, thereby reducing the defect rate and improving the reliability of thinned semiconductor substrates.
Solution Approach 2:
The adhesive protective layer and other protective structures are formed before the thinning process to ensure that the circuit elements are protected during subsequent processing steps, preventing defects from occurring during division and peeling.
3Strength
If a laminated structure with adhesive protective layer is formed to protect circuit elements, then the film strength and defect suppression are improved, but the device complexity increases
Solution Approach 1:
The protective structure is divided into multiple functional layers (adhesive protective layer, adhesive layer, peeling layer), each performing a specific function. This segmentation allows for optimized protection while maintaining ease of removal and processing.
Solution Approach 2:
The adhesive protective layer acts as an intermediary between the circuit elements and the external environment, providing mechanical support and protection during processing while being removable afterward, thus temporarily increasing complexity to achieve long-term benefit.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses defects in semiconductor elements by reinforcing the circuit elements with an adhesive protective layer, ensuring their integrity during processing and reducing the number of defective units.
Implementation Method 1
removing the peeling layer and the support substrate by photoirradiation of the peeling layer
Implementation Method 2
removing the adhesive layer by heat treatment
Data Source
AI summary
An object is to provide a technique capable of suppressing defectives in semiconductor elements. A manufacturing method of a semiconductor device includes a step of forming a laminated body in which an adhesive protective layer, an adhesive layer, a peeling layer, and a support substrate are disposed in this order on a first main surface of the semiconductor substrate, a step of removing the semiconductor substrate other than a portion where a plurality of circuit elements are formed, a step of bonding the portion where the circuit elements are formed to a transfer substrate, a step of removing the peeling layer, the support substrate and the adhesive layer, a step of removing the adhesive protective layer by chemical treatment, and a step of dividing the plurality of circuit elements.


