Semiconductor Device Threshold Voltage Correction
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Solution Overview
Problem
The challenge lies in manufacturing p-type semiconductors for metal oxide transistors, which are difficult to produce with high mobility and reliability, limiting the development of p-channel single-polarity circuits and increasing the size and heat generation of single-polarity circuits compared to CMOS circuits, as well as variability in transistor characteristics.
Innovation Solution
A semiconductor device with a configuration that includes multiple transistors and capacitors to vary and correct the threshold voltage of transistors, allowing for the creation of a single-polarity circuit capable of arithmetic processing with improved accuracy and reduced temperature sensitivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single-polarity circuit is formed using only n-channel transistors, then the circuit can be manufactured with metal oxide semiconductors, but the circuit size increases and heat generation increases
Solution Approach 1:
The invention divides the single-polarity circuit into multiple functional blocks (arithmetic operation circuit, storage circuit, control circuit) that can be independently optimized and configured. This segmentation allows for more efficient layout and reduces overall circuit size while maintaining the single-polarity architecture benefit for metal oxide semiconductor manufacturability
Solution Approach 2:
The invention designs universal circuit modules that can perform multiple functions. For example, the arithmetic operation circuit can perform various arithmetic operations, and the storage circuit can store different types of data. This multi-functionality reduces the total number of transistors needed compared to dedicated circuits, thereby reducing circuit size while maintaining single-polarity manufacturability
2Ease of manufacture
If a single-polarity circuit is formed using only n-channel transistors, then the circuit can be manufactured with metal oxide semiconductors, but heat generation increases
Solution Approach 1:
The invention introduces dynamic voltage adjustment mechanisms that adapt operating voltages based on circuit state and workload. By dynamically optimizing voltage levels, the circuit reduces power consumption and heat generation while maintaining functionality. This is achieved through control circuits that monitor and adjust voltages in real-time, allowing metal oxide semiconductor circuits to operate efficiently with reduced thermal output
3Ease of manufacture
If a single-polarity circuit is formed using only n-channel transistors, then the circuit can be manufactured with metal oxide semiconductors, but the variation in transistor characteristics increases
Solution Approach 1:
The invention incorporates feedback mechanisms where control circuits monitor transistor characteristics and adjust operating parameters accordingly. This feedback allows the system to compensate for manufacturing variations in transistor characteristics, maintaining consistent circuit performance despite variations in threshold voltage or mobility. The feedback loops continuously optimize circuit operation to mitigate the effects of manufacturing precision limitations
Solution Approach 2:
The invention utilizes parameter changes in transistor operating conditions to compensate for manufacturing variations. By adjusting gate voltages, channel widths, or other operational parameters, the circuit can optimize performance for each transistor's actual characteristics. This parameter tuning approach allows metal oxide semiconductor circuits to achieve consistent performance despite variations in transistor manufacturing
Data Source
AI summary
A semiconductor device in which the accuracy of arithmetic operation is increased by correction of the threshold voltage of a transistor can be provided. The semiconductor device includes first and second current supply circuits, and the second current supply circuit has the same configuration as the first current supply circuit. The first current supply circuit includes first and second transistors, a first capacitor, and first to third nodes. A first terminal of the first transistor is electrically connected to the first node, and a back gate of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitor. A gate of the first transistor is electrically connected to the second node, and a second terminal of the first capacitor is electrically connected to a second terminal of the first transistor. The first node of the first current supply circuit is electrically connected to a second node of each of the first and second current supply circuits. The threshold voltage of the first transistor is corrected by writing a correction voltage to the back gate of the first transistor.