Semiconductor Through-Connection Masking for Insulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for producing semiconductor bodies with through-connections require complex process control and multiple photoresist masks, making it challenging to accurately pattern insulating and contact layers without short-circuiting semiconductor layers.
Innovation Solution
A method involving a first mask layer with patterned openings and a second unpatterned mask layer, where the second mask layer forms an undercut to shadow the side face of the recess, allowing for simultaneous patterning of the contact and passivation layers using a joint etching method, reducing the need for separate masks and simplifying process control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple photoresist masks and separate photo levels are used to pattern insulating and contact layers, then the through-connection can be produced with proper insulation, but the process control becomes extremely complex and difficult to manage
Solution Approach 1:
The patent combines the patterning of the insulating layer and contact layer into a single photo level process. The insulating layer is patterned first, then the contact layer is applied and selectively removed only in regions where the insulating layer has openings, eliminating the need for separate photo levels and reducing process complexity while maintaining proper insulation.
Solution Approach 2:
The insulating layer is applied and patterned in advance before the contact layer is deposited. This preliminary patterning creates a mask structure that automatically defines where the contact layer should be present or absent, simplifying subsequent processing steps and reducing the need for complex process control.
2Manufacturing precision
If conventional separate masking methods are used for contact and passivation layers, then each layer can be precisely patterned, but additional masks and process steps are required, increasing cost and space requirements
Solution Approach 1:
The insulating layer serves multiple functions: it provides electrical insulation, acts as a pattern definition mask for the contact layer, and enables selective contact layer removal. This multi-functionality eliminates the need for separate masks for contact and passivation layers, reducing manufacturing complexity while maintaining precision.
Solution Approach 2:
The insulating layer structure itself serves as the patterning mechanism for subsequent layers. The openings in the insulating layer automatically define the contact regions, and the presence of the insulating layer in other regions automatically protects those areas during contact layer deposition, eliminating the need for additional masking operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the process by allowing for accurate placement of contact layers within recesses while preventing short-circuits, reducing costs and space requirements, and enabling conformal coating of passivation layers without additional masking.
Implementation Method 1
an etching method is used to form the at least one mask opening in the mask layer and the at least one recess in the semiconductor body
Implementation Method 2
a first deposition method is used to apply the contact layer and a second deposition method is used to apply the passivation layer
Data Source
AI summary
A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. The method further includes applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method and applying a passivation layer to the side face of the at least one recess.