Semiconductor Through-Electrode Stability via Buried Pad Cushioning
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in maintaining reliability due to issues such as through-electrode bending or breaking, and unstable electrical connections, particularly in high-integration and high-speed applications.
Innovation Solution
The semiconductor device design includes a through-electrode penetrating the substrate with a buried pad surrounding it, and a pad insulating layer to prevent mechanical stress and ensure stable electrical connections, featuring a pad barrier and metal layers to prevent diffusion and enhance structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a through-electrode penetrates the semiconductor substrate for high integration and fast driving, then communication between stacked chips and external systems is enabled, but the through-electrode is susceptible to bending or breaking due to mechanical stress
Solution Approach 1:
A pad trench is formed around the through-electrode at the second surface of the semiconductor substrate, and a buried pad is disposed within this trench. This buried pad structure acts as a protective cushion that surrounds and supports the through-electrode, preventing bending or breaking caused by mechanical stress while maintaining the through-electrode's electrical connection function
Solution Approach 2:
The pad structure is segmented into multiple components: a pad trench (recessed region), a buried pad (conductive structure within the trench), and optionally a pad insulating layer. This segmentation allows each component to perform its specific function - the trench provides structural support, the buried pad provides electrical connection and mechanical reinforcement, and the insulating layer provides electrical isolation
2Reliability
If the through-electrode is made to protrude from the substrate surface for connection, then electrical connection is established, but mechanical stress concentrates at the protrusion point making it vulnerable to damage
Solution Approach 1:
The pad trench is formed to extend to the second surface of the semiconductor substrate, creating a recessed protective structure before the through-electrode is fully exposed. The buried pad is then disposed within this pre-formed trench, providing mechanical support and stress distribution at the critical connection point, thereby preventing bending or breaking while maintaining electrical connection
3Strength
If a buried pad surrounds the through-electrode to prevent bending, then structural integrity is improved, but device complexity increases due to additional layers and structures
Solution Approach 1:
The pad trench and buried pad are merged into an integrated protective structure. The trench is formed as a recessed region in the substrate surface, and the buried pad is disposed within this trench, combining the structural support function of the trench with the electrical connection function of the pad into a single integrated feature that reduces overall device complexity
Data Source
AI summary
Semiconductor devices are disclosed. The semiconductor device may include a semiconductor substrate having a first surface and a second surface opposite to each other and a pad trench formed at a portion of the second surface, a through-electrode penetrating the semiconductor substrate and protruding from a bottom surface of the pad trench. A buried pad may be disposed in the pad trench and may surround the through-electrode.