Semiconductor Through Electrode Connection Structure
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Solution Overview
Problem
Conventional through chip via (TCV) structures have a simple serial connection method between through electrodes and electrode pads, which complicates the connection process and lacks efficient miniaturization for advanced semiconductor devices like camera modules.
Innovation Solution
A semiconductor device with a through hole structure featuring a direct and indirect connection between electrode pads and through electrodes, utilizing a connection structure that includes a first connection portion for direct connection and a second connection portion for indirect connection, along with a dummy STI and dummy gate electrode to facilitate manufacturing and miniaturization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a simple serial connection method is used between through electrodes and electrode pads, then the structure is simplified, but the connection reliability is insufficient and miniaturization is limited
Solution Approach 1:
The connection structure is segmented into multiple portions: a first connection portion that directly connects the through electrode to the electrode pad, and a second connection portion that indirectly connects them. This segmentation allows each portion to be optimized for its specific function, improving overall connection reliability while maintaining manufacturability
Solution Approach 2:
The patent transitions from a simple one-dimensional serial connection to a multi-dimensional connection structure with multiple paths and portions. This dimensional expansion provides redundancy and alternative current paths, enhancing connection reliability without significantly increasing overall device complexity
2Ease of manufacture
If conventional TCV structures are used, then the manufacturing process is simplified, but adaptability for miniaturization is reduced
Solution Approach 1:
The connection structure is divided into multiple portions that can be independently optimized and manufactured. This segmentation enables flexible adaptation to different miniaturization requirements while maintaining a systematic manufacturing approach that builds upon conventional processes
Solution Approach 2:
The patent introduces a dynamic and flexible connection structure that can be adapted to various miniaturization scales and device configurations. The multi-port ion connection structure allows for scalability and adaptability across different device sizes and applications
3Reliability
If direct connection only is used between through electrodes and electrode pads, then connection reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The connection structure is segmented into functional portions where the first connection portion provides direct connection for reliability, while the second connection portion handles additional functions. This segmentation distributes complexity across manageable segments rather than concentrating it in a single complex structure
Solution Approach 2:
The multi-port ion connection structure serves multiple functions: direct electrical connection, mechanical support, and potential additional functional roles. This multi-functionality reduces the need for separate dedicated structures, thereby managing overall device complexity while maintaining high connection reliability
Data Source
AI summary
According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.