Semiconductor Package Through Electrode Copper Diffusion Prevention
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Solution Overview
Problem
In stack semiconductor packages, copper diffusion from through electrodes into semiconductor chips occurs due to poor barrier or adhesive layer application, leading to circuit malfunction and reliability issues.
Innovation Solution
A contamination preventing layer, including argon, is formed in the semiconductor chip to prevent copper diffusion, and an isolation pattern is created around through electrodes to electrically isolate them, along with a simplified back side bump structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a barrier layer or adhesive layer is applied to prevent copper diffusion, then copper diffusion is reduced, but the manufacturing complexity and process difficulty increase due to poor applied state issues
Solution Approach 1:
The patent extracts the copper diffusion prevention function from the barrier/adhesive layers and relocates it to the contamination preventing layer formed directly in the semiconductor chip. This eliminates the need for separate barrier layers in the back side bump structure, simplifying the overall device structure while maintaining copper diffusion prevention effectiveness.
Solution Approach 2:
The contamination preventing layer acts as an intermediary barrier between the copper-containing back side bump and the semiconductor chip interior. By forming this layer within the chip substrate itself, it provides a more reliable diffusion barrier compared to external barrier layers, as it is inherently integrated into the chip structure.
2Productivity
If through electrodes are used to electrically connect stacked semiconductor chips, then data storage capacity and processing speeds are improved, but copper diffusion from through electrodes into the chip causes circuit malfunction
Solution Approach 1:
The patent segments the through electrode structure by introducing the contamination preventing layer that divides the through electrode into isolated sections. This segmentation prevents continuous copper diffusion paths from the through electrode into the semiconductor chip circuits, while maintaining the electrical connectivity function of the through electrodes.
3Ease of operation
If the back surface of the semiconductor chip is ground to expose through electrodes, then electrical connection is improved, but copper is pushed outward from through electrodes causing diffusion
Solution Approach 1:
The contamination preventing layer is formed in advance within the semiconductor chip before the back surface grinding process. This preliminary action ensures that when the back surface is ground and through electrodes are exposed, the copper is already contained by the pre-formed contamination preventing layer, preventing outward push and diffusion during the grinding operation.
4Reliability
If a contamination preventing layer including argon is formed in the semiconductor chip, then copper diffusion is prevented, but the manufacturing process becomes more complex
Solution Approach 1:
The patent changes the material parameter of the contamination preventing layer by using argon, an inert gas that forms a stable, non-reactive layer within the semiconductor chip. This parameter change (using inert argon instead of reactive materials) provides effective copper diffusion prevention while the layer can be formed using standard semiconductor manufacturing processes, balancing reliability improvement with manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents copper diffusion into the semiconductor chip, enhancing the reliability of the semiconductor package and simplifying the manufacturing process by reducing the need for a barrier layer in the back side bump structure.
Implementation Method 1
a contamination preventing layer formed in the semiconductor chip, the through electrode passing through the contamination preventing layer
Data Source
AI summary
A semiconductor package includes a semiconductor chip having a front surface and a back surface facing away from the front surface; a through electrode formed in the semiconductor chip and passing through the front surface and the back surface; and a contamination preventing layer formed in the semiconductor chip, the through electrode passing through the contamination preventing layer.