Semiconductor Through Electrode Integration for Packaging Density

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Solution Overview

Problem

The existing semiconductor device manufacturing processes are complex and costly due to the independent formation of through electrodes and solder balls, which complicates the packaging density improvement in electronic devices.

Innovation Solution

A semiconductor device with a through electrode that penetrates the substrate and connection electrode, integrated with an insulation portion, is manufactured using a method involving a support member and adhesive agent to form through holes and electrodes in a single step, simplifying the process and reducing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If through electrode and solder ball are formed independently, then connection reliability is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveconnection reliabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the through electrode formation and solder ball formation into a single integrated process. The support member serves dual purposes: it provides structural support during processing and acts as a mold for forming the solder ball. This merging of functions eliminates the need for separate formation steps, reducing manufacturing complexity while maintaining connection reliability through the integrated structure.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The support member performs multiple functions simultaneously: it supports the semiconductor chip during processing, defines the through hole geometry, and serves as the mold for the solder ball formation. This multi-functionality reduces the number of separate components and process steps needed, addressing the manufacturing complexity issue while ensuring reliable connections.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If through electrode and solder ball are formed independently, then connection quality is improved, but manufacturing cost increases

Engineering Contradiction:
Improveconnection qualityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

By merging the through electrode formation and solder ball formation into one integrated process using the support member as a dual-purpose tool, the patent reduces the number of manufacturing steps. This consolidation directly lowers manufacturing costs by reducing process time, equipment usage, and operational complexity, while the integrated structure maintains high connection quality.

Inventive Principle:
Principle #5Merging (Combining)

3Productivity

If through electrode protrudes from substrate surface, then electrical coupling efficiency is improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveelectrical coupling efficiencyVSAvoidprotrusion precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The support member automatically defines the protrusion height and geometry of the through electrode during the formation process. As the support member has a predetermined height, the through electrode naturally protrudes by this fixed amount without requiring additional precision control steps. This self-defining mechanism reduces manufacturing precision requirements while ensuring efficient electrical coupling.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS8148771B2Semiconductor device and method to manufacture thereof
Publication Date: 2012.04.03 MONTEREY RESEARCH LLC
  • US8148771B2 patent drawing
  • US8148771B2 patent drawing
  • US8148771B2 patent drawing

AI summary

A semiconductor device 100 includes a semiconductor substrate 14, a connection electrode 12 disposed on an upper surface of the semiconductor substrate 14 and connected to an integrated circuit thereon, a through electrode 20 which penetrates the semiconductor substrate 14 and the connection electrode 20, and an insulation portion 30 interposed between the semiconductor substrate 14 and the through electrode 20. The through electrode 20 is integrally formed to protrude outward from upper surfaces of the semiconductor substrate 14 and the connection electrode 12, and connected to the connection electrode 12 in a region where the through electrode 20 penetrates the connection electrode 12.