Semiconductor Through Hole Formation via Groove Insulation
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Solution Overview
Problem
Current methods for high-density mounting of semiconductor chips face challenges in efficiently forming through holes for electrical connections, particularly in achieving accurate verticality and high production efficiency, especially when stacking multiple layers.
Innovation Solution
A semiconductor device configuration that includes a semiconductor substrate with a through groove filled with a first insulating layer, supported by a second and third insulating layer, and a conductive material in a through hole, allowing for easier and more accurate formation of through holes and improved production efficiency through dry or wet etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If through holes are formed directly in stacked semiconductor chips for electrical connection, then high density mounting is achieved, but manufacturing precision and verticality accuracy deteriorate
Solution Approach 1:
The groove is formed in the semiconductor substrate before chip stacking, and the insulating layer is preliminarily filled into the groove. This preliminary preparation provides a pre-defined path for through hole formation, ensuring verticality accuracy while simplifying the subsequent through hole formation process after stacking, thus resolving the contradiction between precision and productivity.
Solution Approach 2:
The through hole formation process is segmented into two stages: (1) groove formation in the substrate before stacking, and (2) through hole formation after stacking. This segmentation allows each stage to be optimized independently - the groove stage ensures verticality guidance, while the through hole stage achieves electrical connection, thereby improving both precision and productivity.
2Ease of manufacture
If through holes are formed after stacking semiconductor chips, then high density mounting is achieved, but the complexity of the manufacturing process increases
Solution Approach 1:
The groove is formed and insulating layer is filled before chip stacking, creating a pre-prepared template that guides subsequent through hole formation. This preliminary action simplifies the post-stacking process by providing a defined path, reducing the complexity of forming through holes through multiple chips while maintaining ease of manufacture.
3Reliability
If conventional methods are used to form through holes in stacked chips, then electrical connection is achieved, but the risk of short circuits increases
Solution Approach 1:
The insulating layer serves as an intermediary material filled in the groove before through hole formation. This insulating layer provides electrical isolation between adjacent through holes and prevents short circuits during the through hole formation process, thereby improving electrical connection reliability while reducing short circuit risk.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor substrate, a first insulating layer, an electrode pad, a through hole, a second insulating layer, and a conductive material. A through groove passes through the semiconductor substrate from a surface to an opposite surface. The first insulating layer fills the through groove. The electrode pad is connected with an interconnection layer. The second insulating layer is provided between the electrode pad and the first insulating layer. The through hole communicates with the electrode pad and passes through the first insulating layer and the second insulating layer. The conductive material is provided in the through hole so as to be connected with the electrode pad.