Semiconductor Through-Hole Plating with Annular Insulating Trench
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Solution Overview
Problem
Existing semiconductor components with through-hole plating face challenges in achieving stable and cost-effective production while minimizing parasitic capacitance and ensuring mechanical stability.
Innovation Solution
The component features through-hole plating surrounded by an annular structure with a channel filled with conductive material, utilizing a lattice structure and insulation layers for reliable sealing and electrical insulation, and optionally incorporating a second lattice structure for enhanced mechanical stability and interference suppression.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If through-hole plating is surrounded by an annular structure with channel filled with conductive material, then mechanical stability is improved, but device complexity increases
Solution Approach 1:
The through-hole plating is nested within an annular structure that has a channel filled with conductive material. This nested configuration provides mechanical support and stability to the through-hole plating while maintaining a compact design. The annular structure acts as a protective enclosure that enhances the overall structural integrity without requiring heavily doped semiconductor material.
Solution Approach 2:
The invention employs composite structures by combining the through-hole plating with an annular structure containing conductive material in its channel. This composite approach creates a mechanically stable assembly that leverages the properties of different materials and structures working together, achieving enhanced stability without increasing device complexity excessively.
2Object-generated harmful factors
If through-hole plating is electrically separated from surrounding semiconductor substrate by an annular trench, then parasitic capacitance is reduced, but manufacturing complexity increases
Solution Approach 1:
An annular trench is extracted or removed from the semiconductor substrate to create electrical separation between the through-hole plating and the surrounding substrate. This extraction of material forms an insulating barrier that reduces parasitic capacitance. The trench can be formed using standard semiconductor fabrication processes such as etching, making it compatible with existing manufacturing workflows.
Solution Approach 2:
The annular trench acts as an intermediary insulating structure between the through-hole plating and the surrounding semiconductor substrate. This intermediate feature provides electrical separation and reduces parasitic capacitance while being integrable into the existing semiconductor fabrication process through standard etching and filling techniques.
3Productivity
If the channel is filled with electrically conductive material in the same process step as the annular trench, then production efficiency is improved, but process complexity increases
Solution Approach 1:
The filling of the channel with electrically conductive material is merged with the annular trench formation process, occurring in the same manufacturing step. This combination of operations improves production efficiency by reducing the total number of process steps. The conductive material filling can be integrated into the trench formation sequence using standard deposition or dispensing techniques performed concurrently with trench etching and processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables cost-effective, stable, and low-parasitic-capacitance through-hole plating with improved mechanical stability and reduced interference, suitable for use in ASICs without requiring heavily doped semiconductor material.
Implementation Method 1
The use of the ring structure featuring a channel which is at least partially filled with an electrically conductive material and which is produced around the ring structure, preferably in the same process step or at the same time/simultaneously with the annular trench, ensures high mechanical stability of the through-hole plating. Moreover, the ring structure offers the possibility of simple production methods for filling the channel, which range from CVD, ALD, sputtering, galvanic techniques, dispensing to fluidly filling the metal material or by pressing in a paste, e.g., utilizing screen printing methods.
Implementation Method 2
The use of the ring structure featuring a channel which is at least partially filled with an electrically conductive material and which is produced around the ring structure, preferably in the same process step or at the same time/simultaneously with the annular trench, ensures high mechanical stability of the through-hole plating. Moreover, the ring structure offers the possibility of simple production methods for filling the channel, which range from CVD, ALD, sputtering, galvanic techniques, dispensing to fluidly filling the metal material or by pressing in a paste, e.g., utilizing screen printing methods.
Implementation Method 3
The use of the ring structure featuring a channel which is at least partially filled with an electrically conductive material and which is produced around the ring structure, preferably in the same process step or at the same time/simultaneously with the annular trench, ensures high mechanical stability of the through-hole plating. Moreover, the ring structure offers the possibility of simple production methods for filling the channel, which range from CVD, ALD, sputtering, galvanic techniques, dispensing to fluidly filling the metal material or by pressing in a paste, e.g., utilizing screen printing methods.
Implementation Method 4
The use of the ring structure featuring a channel which is at least partially filled with an electrically conductive material and which is produced around the ring structure, preferably in the same process step or at the same time/simultaneously with the annular trench, ensures high mechanical stability of the through-hole plating. Moreover, the ring structure offers the possibility of simple production methods for filling the channel, which range from CVD, ALD, sputtering, galvanic techniques, dispensing to fluidly filling the metal material or by pressing in a paste, e.g., utilizing screen printing methods.
Data Source
AI summary
A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.