Semiconductor Through Hole Wiring Reliability
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Solution Overview
Problem
Conventional semiconductor devices with through connection portions experience mechanical reliability issues due to thinning of front surface wiring layers, leading to poor connections and reduced yield, as the exposed wiring layers are thinned during the formation of through holes, resulting in decreased mechanical and electrical reliability.
Innovation Solution
The semiconductor device incorporates a unique structure with a through hole and multiple insulating and conductor layers, where the second insulating layer has a connection opening that separates the first and third conductor layers, preventing erosion and ensuring a minimum separation distance to prevent electrostatic breakdown, thereby enhancing mechanical and electrical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through hole is formed by etching from the rear surface of a semiconductor substrate to expose the front surface wiring layer, then electrical connection between front and rear surface wirings is achieved, but the wiring layer is thinned and eroded resulting in decreased mechanical reliability
Solution Approach 1:
The patent divides the continuous etching process into two separate stages: first forming a through hole in the semiconductor substrate without exposing the wiring layer, then separately forming openings in the insulating layers to expose the wiring layer. This segmentation prevents erosion of the wiring layer while achieving the necessary electrical connections.
Solution Approach 2:
The patent performs preliminary formation of the through hole in the semiconductor substrate before forming openings in the insulating layers. This preliminary action allows the substrate to be penetrated without exposing the wiring layer to etching damage, preserving its mechanical integrity.
2Reliability
If the through hole is formed to expose the wiring layer for connection, then electrical connection is established, but the separation distance between conductor layers is reduced leading to electrostatic breakdown risk
Solution Approach 1:
The patent introduces an insulating layer as an intermediary between the first and third conductor layers. This insulating layer maintains a separation distance of at least 50 nm, preventing electrostatic breakdown while allowing electrical connection through controlled openings in the insulating layers.
Solution Approach 2:
The patent adds a vertical dimension to the structure by forming multiple insulating layers at different heights. The second insulating layer is formed to cover the first insulating layer, creating a layered structure that maintains horizontal separation while enabling vertical electrical connections through controlled openings.
3Reliability
If multiple insulating and conductor layers are added to prevent erosion and ensure separation, then mechanical and electrical reliability is improved, but device structure becomes more complex
Solution Approach 1:
The patent designs the insulating layers to serve multiple functions: they provide electrical insulation between conductor layers, maintain separation distances to prevent electrostatic breakdown, and act as structural support to prevent wiring layer erosion. This multi-functionality reduces the need for additional separate components.
Solution Approach 2:
The patent combines the functions of insulation and structural support into the same insulating layers. The second insulating layer both insulates the conductor layers and provides mechanical support to the wiring layer, merging multiple protective functions into a unified structure.
Data Source
AI summary
A semiconductor device 1 has a through hole 3 formed in a second substrate 2. On the front surface of the semiconductor substrate 2, a first insulating layer 4 is coated having an opening 4a of the same diameter as that of the through hole 3, and a first wiring layer 5 is formed on the first insulating layer 4. Further, near the first wiring layer 5, the through hole 3 and a through connection portion constituted of a third insulating layer 8 formed on the inner surface and the like and a third wiring layer 9 filled and formed in the through hole 3 are formed. In addition, a second wiring layer 7 internally contacting the through connection portion is electrically connected with the first wiring layer 5. Between the inner surface of the through hole 3 and the first wiring layer 5, a second insulating layer 6 intervenes so that the first wiring layer 5 is separated from the third wiring layer 9 filled and formed in the through hole 3.