Semiconductor Device Through Part Segmentation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in achieving reliable manufacturing processes and structural integrity, particularly in the formation and connection of transistors and capacitors within the device, which affects the overall performance and reliability of the semiconductor device.
Innovation Solution
The semiconductor device incorporates a base substrate with strategically positioned transistors, insulating layers, and through parts that expose specific areas of the semiconductor patterns, allowing for the connection of input and output electrodes to the semiconductor patterns through these through parts, enhancing the structural reliability and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through parts are formed to connect input and output electrodes to semiconductor patterns, then electrical connectivity is enhanced, but manufacturing complexity increases
Solution Approach 1:
The through part is divided into multiple sections: a first through part formed through the first insulating layer, and a second through part formed through the second insulating layer. This segmentation allows for staged formation and connection processes, reducing the complexity of forming a single deep through part while maintaining electrical connectivity between the input/output electrodes and semiconductor patterns.
Solution Approach 2:
The connection structure transitions from a single vertical through part to a multi-layered through part structure that extends through multiple insulating layers. This dimensional approach distributes the connection path across different layers, making the manufacturing process more manageable while ensuring reliable electrical connectivity.
2Stability of the object's composition
If multiple insulating layers are used to cover control electrodes and semiconductor patterns, then structural integrity is improved, but process complexity increases
Solution Approach 1:
The insulating structure is segmented into a first insulating layer covering the control electrode and a second insulating layer covering the first insulating layer. This segmentation provides structural integrity through layered protection while allowing for staged manufacturing processes, reducing the complexity of forming and patterning a single thick insulating layer.
Solution Approach 2:
The first insulating layer is formed and patterned before the second insulating layer. This preliminary action allows the first insulating layer to provide structural support and define initial patterns, while the second insulating layer is subsequently formed to provide additional protection and enable further processing steps.
3Reliability
If through parts expose semiconductor pattern areas on both sides of control electrode, then electrical connection reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The exposure of semiconductor patterns is segmented into two separate through parts: a first through part exposing a first area of the semiconductor pattern, and a second through part exposing a second area on the other side of the control electrode. This segmentation reduces the alignment precision requirements compared to forming a single wide through part, as each through part can be independently formed and aligned to its respective target area.
Data Source
AI summary
A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.