Semiconductor Processing Solution for Titanium Residue Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing processing solutions for semiconductor substrates face challenges in efficiently removing titanium-based residues while maintaining anticorrosion properties, often leading to damage to metal layers due to high concentrations of hydrogen fluoride.
Innovation Solution
A processing solution comprising a compound that releases fluoride ions, an alkali metal or alkaline earth metal ion, and an organic solvent, along with an optional anticorrosive agent, is used to effectively remove titanium-based residues without damaging metal layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a processing solution containing hydrogen fluoride is used to remove dry etching residues, then residue removal properties are improved, but damage to metal layers occurs
Solution Approach 1:
The patent changes the chemical parameters of the processing solution by replacing hydrogen fluoride with a fluoride ion-releasing compound combined with specific metal ions (alkali metal, alkaline earth metal, or Group III elements). This parameter change maintains effective titanium-based residue removal while reducing harmful effects on metal layers through controlled ion interactions
Solution Approach 2:
The patent introduces intermediary substances (fluoride ion-releasing compounds combined with specific metal ions) that mediate between the need for effective residue removal and the need to protect metal layers. These intermediaries provide the necessary chemical activity for residue removal while their specific ion combinations reduce direct corrosive damage to metal layers
2Manufacturing precision
If conventional processing solutions are used, then residue removal is achieved, but anticorrosion properties are insufficient
Solution Approach 1:
The patent creates a composite processing solution by combining fluoride ion-releasing compounds with specific metal ions (alkali metal, alkaline earth metal, or Group III elements) and organic solvents. This composite formulation achieves synergistic effects where the combination provides both effective titanium-based residue removal and improved anticorrosion properties that neither component achieves alone
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution efficiently removes titanium-based residues and enhances anticorrosion properties, reducing damage to metal layers and silicon-based materials, thereby improving semiconductor manufacturing yield and electrical characteristics.
Implementation Method 1
a compound capable of releasing a fluoride ion
Implementation Method 2
an organic solvent
Data Source
AI summary
There are provided a processing solution, including (A) a compound capable of releasing a fluoride ion, (B) at least one selected from the group consisting of an ion of an alkali metal, an ion of an alkaline earth metal, and an ion of an element in Group III of the periodic table, and (C) an organic solvent; a method for processing a semiconductor substrate using the same; and a method for manufacturing a semiconductor using the same.