Semiconductor Arrangement Titanium-Silicon Bonding
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Solution Overview
Problem
Current semiconductor arrangements face challenges in efficiently integrating micro-electro-mechanical system (MEMS) devices with enhanced bonding and conductivity, often requiring dopant implants that increase processing complexity and outgassing, which can compromise vacuum seals.
Innovation Solution
A semiconductor arrangement is formed by patterning oxide layers over metal connects on a substrate, depositing metal layers, and bonding wafer portions with titanium-silicon bonds, which reduces the bonding area requirement and enhances conductivity, while eliminating the need for dopant implants, thereby improving vacuum sealing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dopant implants are used to enhance bonding and conductivity in MEMS devices, then bonding strength and electrical conductivity are improved, but processing complexity increases and outgassing occurs which compromises vacuum seals
Solution Approach 1:
The patent extracts and eliminates the dopant implantation step from the fabrication process. Instead of using dopant implants to enhance bonding and conductivity, the invention uses direct metal-to-metal bonding between titanium layers, which achieves the same functional improvements without the harmful dopant implantation process, thereby reducing processing complexity and eliminating outgassing issues
Solution Approach 2:
The patent replaces the chemical/dopant-based bonding mechanism with a mechanical/physical metal bonding mechanism. By using titanium metal layers that directly bond through physical contact and diffusion bonding, the invention substitutes the need for dopant implantation, achieving enhanced bonding strength and conductivity through material properties rather than chemical modification
2Reliability
If dopant implants are used to enhance bonding and conductivity, then electrical conductivity is improved, but outgassing occurs which compromises vacuum seals
Solution Approach 1:
The patent extracts and eliminates the dopant implantation step from the fabrication process. Instead of using dopant implants to enhance bonding and conductivity, the invention uses direct metal-to-metal bonding between titanium layers, which achieves the same functional improvements without the harmful dopant implantation process, thereby reducing processing complexity and eliminating outgassing issues
Solution Approach 2:
The patent converts the potential harm of dopant implantation into benefit by using titanium's natural properties. Titanium metal inherently provides both the desired electrical conductivity and bonding strength without requiring dopant implantation, thus converting the harmful outgassing issue into a beneficial situation where the material itself provides the needed properties without side effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the conductivity of the semiconductor arrangement, reduces processing complexity, and achieves a stronger vacuum seal by minimizing outgassing, as the titanium-silicon bonds require less area and eliminate the need for dopant implants.
Implementation Method 1
bonding wafer portions with titanium-silicon bonds
Data Source
AI summary
A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a MEMS device in a MEMS area, where a first metal layer is connected to a first metal connect adjacent the MEMS area and a cap is over the MEMS area to vacuum seal the MEMS area. A first wafer portion is over and bonded to the first metal layer which connects the first metal connect to a first I/O port using metal routing. The first metal layer and the first wafer portion bond requires 10% less bonding area than a bond not including the first metal layer. The semiconductor arrangement including the first metal layer has increased conductivity and requires less processing than an arrangement that requires a dopant implant to connect a first metal connect to a first I/O port and has a better vacuum seal due to a reduction in outgassing.