Semiconductor Transfer via Adhesive Layer and Electromagnetic Wave

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Solution Overview

Problem

Current semiconductor transfer technologies, such as direct and indirect transfer methods, are inefficient due to multiple bonding and de-bonding steps, which can damage devices and reduce process yield, especially when handling micro LED structures.

Innovation Solution

A method involving coating an adhesive layer with a surfactant component onto a carrier substrate, irradiating electromagnetic waves to reduce adhesion pressure, and transferring semiconductor structures to a receiving substrate while maintaining their position, utilizing a carrier substrate with a pass band that overlaps with the semiconductor's rejection band to minimize damage and improve handling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If traditional direct transfer method is used, then the transfer process is simple, but device damage occurs and process yield reduces due to strong adhesion

Engineering Contradiction:

Improvetransfer process simplicityVSAvoidprocess yield

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the adhesion parameter of the adhesive layer by controlling its composition and properties. The adhesive layer is designed with specific adhesion strength to the carrier substrate while having controllable adhesion to the semiconductor structure, allowing the structure to be released during transfer without damage.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent introduces an adhesive layer as an intermediary between the carrier substrate and the semiconductor structure. This adhesive layer acts as a mediator that temporarily holds the structure during transfer and then releases it, preventing direct strong adhesion that would cause damage.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If traditional indirect transfer method is used, then device damage is reduced, but process complexity increases due to multiple bonding and de-bonding steps

Engineering Contradiction:

Improvedevice integrityVSAvoidprocess steps

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the carrier substrate and adhesive layer into a single integrated transfer component. The adhesive layer is applied directly to the carrier substrate, merging the holding and transfer functions into one unit, thereby simplifying the overall transfer process while maintaining device integrity.

Inventive Principle:

Principle #5Merging (Combining)

3Stability of the object's composition

If strong adhesion is used to hold semiconductor structure, then structure stability during handling is improved, but transfer difficulty increases due to high adhesion pressure

Engineering Contradiction:

Improvestructure stabilityVSAvoidtransfer ease

Core Design Contradiction:

Stability of the object's compositionVSEase of operation

Solution Approach 1:

The patent applies local quality by creating different adhesion characteristics in different locations and interfaces. The adhesive layer has strong adhesion to the carrier substrate (for stability) while having controllable, reduced adhesion to the semiconductor structure (for easy transfer). This localized differentiation of adhesion properties resolves the contradiction between stability and transfer ease.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method reduces adhesion pressure, allowing for easier and more predictable transfer of semiconductor structures, increasing process yield and preventing damage during handling, while also acting as a buffer to absorb external forces.

Implementation Method 1

irradiating at least one electromagnetic wave to the adhesive layer at least through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure

Methodology Applied

Scientific EffectElectromagnetic wave absorption: Absorption (EM radiation)

Implementation Method 2

the carrier substrate has an pass band in between ultraviolet to infrared, and the pass band of the carrier substrate and the rejection band of the semiconductor structure at least partially overlap

Methodology Applied

Scientific EffectElectromagnetic wave transmission: Filter (optical)

Data Source

PatentUS9722134B1Method for transferring semiconductor structure

Publication Date: 2017.08.01 MIKRO MESA TECH

AI summary

A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure, in which the adhesive layer includes an adhesive component and a surfactant component therein after the disposing; irradiating the electromagnetic wave to the adhesive layer through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure while remaining the semiconductor structure within a predictable position, in which the semiconductor structure has a rejection band or is completely opaque, the carrier substrate has a pass band, and the pass band of the carrier substrate and the rejection band of the semiconductor structure overlaps; and transferring the semiconductor structure from the adhesive layer to a receiving substrate structure after the adhesion pressure of the adhesive layer is reduced.