Semiconductor Transfer via Dynamic Adhesive Layer

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Solution Overview

Problem

Traditional semiconductor transfer methods, such as direct and indirect transfer, involve multiple bonding and de-bonding steps, which can be complex and inefficient, particularly in scaling down micro-device packaging technologies.

Innovation Solution

A method involving coating an adhesive layer with an adhesive and surfactant component onto a carrier substrate, irradiating electromagnetic waves to reduce adhesion pressure, and transferring semiconductor structures from the adhesive layer to a receiving substrate while maintaining their position, using a transfer head to pick up and place them on the receiving substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If traditional direct transfer method is used, then bonding step is simplified, but transfer precision and position control deteriorate

Engineering Contradiction:
Improvenumber of bonding stepsVSAvoidtransfer position precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent introduces an adhesive layer as an intermediary between the semiconductor structure and carrier substrate. This adhesive layer enables controlled adhesion and release, serving as a mediator that facilitates precise transfer while maintaining position control, thus resolving the contradiction between simplifying the process and maintaining precision.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent employs electromagnetic wave irradiation to dynamically change the adhesion parameters of the adhesive layer. By adjusting the adhesion strength through parameter changes, the system achieves both easy transfer and precise position control, resolving the contradiction between process simplicity and transfer precision.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If traditional indirect transfer method is used, then transfer precision is improved, but process complexity and time increase

Engineering Contradiction:
Improvetransfer position precisionVSAvoidnumber of bonding/de-bonding steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent merges the bonding and transfer operations into a single integrated process. The adhesive layer allows the semiconductor structure to be transferred directly from the growth substrate to the carrier substrate in one step, combining multiple traditional steps into one unified operation, thus reducing process complexity while maintaining precision.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The adhesive layer serves as a mediator that enables direct transfer without requiring separate bonding and de-bonding steps. It provides controlled adhesion that allows precise positioning while simplifying the overall process flow, resolving the contradiction between precision and process complexity.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Stability of the object's composition

If strong adhesion is used to maintain position, then position stability improves, but transfer ease deteriorates

Engineering Contradiction:
Improveposition stabilityVSAvoidtransfer ease
Core Design Contradiction:
Stability of the object's compositionVSEase of operation

Solution Approach 1:

The patent makes the adhesion strength dynamic rather than static. The adhesive layer's adhesion strength can be changed on-demand through electromagnetic wave irradiation, allowing the system to switch between strong adhesion (for position stability) and weak adhesion (for easy transfer), thus resolving the contradiction between position stability and transfer ease.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the physical-chemical parameters of the adhesive layer through electromagnetic wave irradiation. This parameter change allows the adhesive to transition between states of strong and weak adhesion, enabling both position stability during processing and ease of transfer when needed, resolving the contradiction between these two requirements.

Inventive Principle:
Principle #35Parameter changes

4Reliability

If multiple bonding steps are used, then transfer reliability is improved, but process time and productivity deteriorate

Engineering Contradiction:
Improvetransfer reliabilityVSAvoidprocess throughput
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent merges multiple bonding and de-bonding steps into a single transfer operation using the adhesive layer. This consolidation maintains transfer reliability through controlled adhesion while significantly reducing process time and increasing productivity, resolving the contradiction between reliability and productivity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The adhesive layer acts as a mediator that enables reliable transfer in a single step. It provides controlled adhesion that ensures transfer reliability while eliminating the need for multiple sequential operations, thus improving productivity without sacrificing reliability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method simplifies the transfer process by reducing adhesion pressure and maintaining predictable positions of semiconductor structures, increasing process yield and ease of handling, and allows for efficient transfer of micro-devices like LEDs without damage, enhancing the scalability of micro-device packaging.

Implementation Method 1

coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure thereto

Methodology Applied
Scientific EffectAdhesion: Adhesive

Implementation Method 2

irradiating at least one first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure

Methodology Applied
Scientific EffectElectromagnetic radiation heating: Dielectric Heating

Data Source

PatentUS9997399B2Method for transferring semiconductor structure
Publication Date: 2018.06.12 MIKRO MESA TECH
  • US9997399B2 patent drawing
  • US9997399B2 patent drawing
  • US9997399B2 patent drawing

AI summary

A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, in which the adhesive layer includes an adhesive component and an surfactant component after the disposing, the semiconductor structure includes a body and a bottom electrode, and the bottom electrode is disposed between the body and the adhesive layer after the disposing; irradiating a first electromagnetic wave to the adhesive layer to reduce adhesion pressure of the adhesive layer to the semiconductor structure while the semiconductor structure remains on the adhesive layer, in which the carrier substrate, the semiconductor structure, and the bottom electrode have a pass band in between ultraviolet to infrared; and transferring the semiconductor structure from the adhesive layer to a receiving substrate after the adhesion pressure of the adhesive layer is reduced.