Semiconductor Element Transfer via Inclined Bonding and Shear Separation

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Solution Overview

Problem

The yield of semiconductor elements is hindered by the unreliable transfer process, where applying force perpendicular to the substrate can cause the electrode to peel off, leading to incomplete separation.

Innovation Solution

A method involving the use of an underlying substrate with an inclined growth surface and a mask with stripe-shaped slits for epitaxial growth, followed by bonding to a support substrate with a matching inclined surface, concentrating shearing stress on the connecting portion to facilitate reliable separation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If force is applied perpendicular to the substrate to separate the semiconductor element, then separation is achieved, but the electrode peels off causing unreliable transfer

Engineering Contradiction:

Improvetransfer reliabilityVSAvoidelectrode peeling

Core Design Contradiction:

ReliabilityVSObject-generated harmful factors

Solution Approach 1:

Instead of applying force perpendicular to separate the semiconductor element from the underlying substrate, the patent inverts the approach by bonding the inclined upper surface of the semiconductor element to an inclined upper surface of the support substrate. This inversion of the bonding interface orientation enables shearing stress concentration at the connecting portion during peeling, achieving reliable separation without electrode damage

Inventive Principle:

Principle #13The other way round (Inversion)

Solution Approach 2:

The patent changes the geometric parameter of the bonding interface from a perpendicular orientation to an inclined orientation. By forming the upper surface of the semiconductor element and the upper surface of the support substrate both with inclination, the bonding interface angle is optimized to concentrate shearing stress at the connecting portion between the semiconductor element and underlying substrate during the peeling process, preventing electrode peeling while enabling complete separation

Inventive Principle:

Principle #35Parameter changes

2Productivity

If conventional transfer methods are used, then separation occurs, but yield is reduced due to incomplete separation and electrode damage

Engineering Contradiction:

ImproveyieldVSAvoidseparation completeness

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent optimizes geometric parameters including the inclination angle of the upper surface (5° to 45°) and the thickness of the semiconductor element (5 µm to 500 µm) to ensure that shearing stress concentrates at the connecting portion between the semiconductor element and underlying substrate. This parameter optimization enables complete and reliable separation, increasing yield by preventing both incomplete separation and electrode damage

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent inverts the conventional approach by bonding the inclined upper surface of the semiconductor element to an inclined support substrate surface rather than bonding perpendicular surfaces. This inversion creates a stress concentration mechanism at the connecting portion during peeling, ensuring complete separation and improving both separation reliability and overall yield

Inventive Principle:

Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enhances the yield of semiconductor elements by ensuring reliable transfer to the support substrate without excessive force, improving the separation process.

Implementation Method 1

a force in a direction perpendicular to each surface of the underlying substrate and the support substrate is applied to break the connecting portion between the underlying substrate and the semiconductor element

Methodology Applied

Scientific EffectBonding: Welding

Implementation Method 2

Methodology Applied

Scientific EffectFracture: Fracture Mechanics

Data Source

PatentEP3933886B1Method for manufacturing semiconductor element and semiconductor element body

Publication Date: 2026.03.18 KYOCERA CORP

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Figure 2A
Figure 2B

AI summary

A method of manufacturing a semiconductor element according to the present disclosure includes an element forming step (S1) of forming, on an underlying substrate (11), a semiconductor element (15) connected to the underlying substrate (11) via a connecting portion (13b) and including an upper surface (15a) inclined with respect to a growth surface of the underlying substrate (11), a preparing step (S2) of preparing a support substrate (16) including an opposing surface (16c) facing the underlying substrate (11), a bonding step (S3) of pressing the upper surface (15a) of the semiconductor element (15) against the opposing surface (16c) of the support substrate (16) and heating the upper surface (15a) to bond the upper surface (15a) of the semiconductor element (15) to the support substrate (16), and a peeling step (S4) of peeling the semiconductor element (15) from the underlying substrate (11).