Adjustable Semiconductor Device Transistor Diode Ratio
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Solution Overview
Problem
Conventional reverse conducting IGBTs lack flexibility in adjusting the ratio between IGBT and diode areas, requiring costly redesigns for changes in application-specific requirements, which is inefficient and time-consuming.
Innovation Solution
A semiconductor device design where transistor and diode sections are separated and can be individually activated, allowing for adjustable ratios between active transistor and diode parts by selectively contacting emitter, collector, and gate electrodes, enabling flexible adjustment of the semiconductor device's performance without the need for redesign.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional RC IGBTs with fixed IGBT and diode areas are used, then the device structure is simple and manufacturing is straightforward, but the ratio between IGBT area and diode area cannot be adjusted for different applications
Solution Approach 1:
The semiconductor device is divided into multiple transistor sections (first transistor section, second transistor section, etc.) and multiple diode sections (first diode section, second diode section, etc.), where each section can be independently activated or deactivated. This segmentation allows the active transistor area to diode area ratio to be adjusted by selectively contacting different sections, thereby achieving adaptability without requiring complete redesign of the device structure.
2Adaptability or versatility
If the IGBT area to diode area ratio needs to be changed for different applications, then application-specific performance can be optimized, but costly redesigns and remanufacturing are required
Solution Approach 1:
The device incorporates switchable transistor sections that can be dynamically activated or deactivated through selective electrical contact. This dynamic configuration capability allows the effective transistor area to diode area ratio to be adjusted according to different application requirements without physical redesign or remanufacturing, significantly reducing development time and costs while maintaining optimized performance for specific applications.
Data Source
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AI summary
A semiconductor device (500) comprises a plurality of transistor sections (Tl) that are separated from each other, wherein each of the plurality of transistor sections (T1) comprises an emitter electrode (41) and a collector electrode (361), and a plurality of diode sections (D1) that are separated from each other, wherein each of the plurality of diode sections (Dl) comprises an anode electrode (46) and a cathode electrode (362). Either, each of the plurality of transistor sections (Tl) is electrically coupled to a common gate pad (45), and a resulting ratio between an active transistor part and an active diode part of the semiconductor device (500) may be adjusted by activating a first number of transistor sections (T1) by selectively contacting the emitter electrodes (41) and the collector electrodes (361) of the first number of transistor sections (Tl), and by activating a second number of diode sections (D1) by selectively contacting the anode electrodes (46) and the cathode electrodes of the second number of diode sections (D1). Or, each of the plurality of transistor sections (Tl) comprises a gate pad (45n), and a plurality of diode sections (Dl) that are separated from each other, wherein each of the plurality of diode sections (Dl) comprises an anode electrode (46) and a cathode electrode (362), wherein a ratio between an active transistor part and an active diode part of the semiconductor device (500) may be adjusted by activating a first number of transistor sections (T1) by selectively contacting the emitter electrodes (41), the collector electrodes (361), and the gate pads (45n) of the first number of transistor sections (Tl), and by activating a second number of diode sections (Dl) by selectively contacting the anode electrodes (46) and the cathode electrodes (362) of the second number of diode sections (Dl).