Semiconductor Logic and Peripheral Region Transistor Design
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Solution Overview
Problem
Existing semiconductor devices face challenges in optimizing the design of logic and peripheral regions to achieve uniform transistor performance and stability, with differences in pattern density and perimeter between these regions leading to variations in spacer formation and doping region precision.
Innovation Solution
The semiconductor device incorporates line-shaped logic transistors, box-shaped decoupling capacitors, and line-shaped peripheral transistors with dummy transistors, utilizing specific spacer configurations and doping regions to unify the pattern density and perimeter across regions, facilitating uniform transistor performance and stable electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the logic region and peripheral region are designed with different pattern densities, then each region can be optimized for its specific function, but the transistor performance becomes non-uniform across regions
Solution Approach 1:
The patent applies local quality by introducing region-specific dummy structures: logic dummy transistors in the logic region and peripheral dummy transistors in the peripheral region. These dummy structures locally adjust pattern density to match reference density values, enabling each region to maintain its functional characteristics while achieving uniform transistor performance across the entire device.
2Productivity
If the perimeter of patterns in the logic region is reduced, then manufacturing efficiency is improved, but spacer formation uniformity deteriorates
Solution Approach 1:
The patent applies equipotentiality by adjusting the perimeters of logic transistors and logic dummy transistors to be substantially equal. This creates equivalent formation conditions for spacers across different regions, ensuring uniform spacer thickness and composition. The equipotential approach allows the logic region to achieve reduced total perimeter for manufacturing efficiency while maintaining spacer formation uniformity through balanced perimeter design.
3Reliability
If doping regions are formed with high precision, then transistor electrical properties are stabilized, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-configuring dummy transistors with specific perimeter dimensions before the doping process. These dummy structures serve as templates that establish uniform formation conditions for subsequent doping regions. By preparing the pattern density and perimeter uniformity in advance, the actual doping process can proceed with standard precision requirements, reducing manufacturing complexity while ensuring high precision doping results.
Data Source
AI summary
A semiconductor device includes a logic region disposed in a central region of the semiconductor device, and a peripheral region disposed in an outer region thereof. The logic region includes a line-shaped logic transistor and a box-shaped decoupling capacitor. The peripheral region includes a line-shaped peripheral transistor and a line-shaped peripheral dummy transistor disposed adjacent to the peripheral transistor.