Semiconductor Device Transistor Spacing Thermal Variation

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Solution Overview

Problem

In multi-finger power amplifier circuits for mobile communication tools, temperature variations among unit transistors due to differences in heat dissipation lead to increased current flow in hotter transistors, resulting in reduced output power and efficiency.

Innovation Solution

A semiconductor device configuration where unit transistors are arranged with varying distances along a column, with closer proximity to the center having larger distances between transistors and outer regions having constant or larger distances, to minimize temperature variations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If unit transistors are arranged in a multi-finger configuration to satisfy high power output level, then power output capability is improved, but temperature variation among unit transistors increases

Engineering Contradiction:
Improvepower output capabilityVSAvoidtemperature variation among unit transistors
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The patent applies local quality by varying the spacing between unit transistors based on their position within the multi-finger configuration. Specifically, a first spacing is provided between adjacent unit transistors in a first region, while a second spacing (different from the first spacing) is provided between adjacent unit transistors in a second region. This non-uniform spacing arrangement creates different thermal characteristics in different regions, compensating for the inherent temperature gradients in multi-finger configurations and reducing overall temperature variation among unit transistors while maintaining high power output capability.

Inventive Principle:
Principle #3Local quality

2Temperature

If unit transistors are arranged with non-uniform spacing to reduce temperature variation, then temperature uniformity is improved, but device layout complexity increases

Engineering Contradiction:
Improvetemperature uniformity among unit transistorsVSAvoidlayout complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the multi-finger transistor configuration into distinct regions (first region and second region), where each region has its own characteristic spacing between unit transistors. This segmentation allows for systematic control of thermal characteristics in different areas of the device, achieving temperature uniformity through a structured approach that balances performance requirements with manufacturing feasibility.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This arrangement reduces temperature variations among transistors, enhancing output power and power added efficiency by preventing current concentration and improving uniform operation.

Implementation Method 1

a variation in temperature occurs among the unit transistors because of a difference in the degree of heat dissipation among the places of the substrate on which the unit transistors are arranged

Methodology Applied
Scientific EffectHeat dissipation: Conduction (thermal)

Data Source

PatentUS10840235B2Semiconductor device
Publication Date: 2020.11.17 MURATA MFG CO LTD
  • US10840235B2 patent drawing
  • US10840235B2 patent drawing
  • US10840235B2 patent drawing

AI summary

Provided is a semiconductor device with a reduced variation in temperature among a plurality of unit transistors. A semiconductor device includes: a semiconductor substrate; and a transistor group including at least one column in which a plurality of unit transistors are aligned and arranged along a first axis on the semiconductor substrate. A first column of the at least one column includes: a first group of transistors including two of the unit transistors that are adjacent to each other with a first distance therebetween, and a second group of transistors including two of the unit transistors that are adjacent to each other with a second distance therebetween, the first group of transistors is disposed at a position closer to a center of the first column along the first axis than the second group of transistors, and the first distance is larger than the second distance.