Semiconductor Active Region Transition Structure for Stress Relief
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Solution Overview
Problem
As demand for high-performance, high-speed, and multifunctional semiconductor devices increases, there is a need for finer patterns and three-dimensional channel structures to enhance integration and reduce limitations in planar metal oxide semiconductor FETs, while maintaining improved electrical and reliability characteristics.
Innovation Solution
A semiconductor device design featuring active regions with varying widths, connected by a transition region with an inclined surface, and including gate structures, channel layers, and a dummy structure that intersects the connection region, allowing for optimized source/drain regions and reduced stress between different width regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If active regions with different widths are connected directly, then device integration is achieved, but stress and volume differences between source/drain regions increase
Solution Approach 1:
A connection region with an inclined surface is introduced as an intermediary structure between the first active region (narrower width) and the second active region (wider width). This gradual transition structure mediates the abrupt width change, reducing stress concentration and volume differences between adjacent source/drain regions while maintaining device integration.
Solution Approach 2:
The connection region employs an inclined surface (curved/gradual transition) instead of an abrupt angular transition between active regions of different widths. This curved transition geometry reduces stress concentration by distributing mechanical loads more evenly across the interface, thereby improving reliability while achieving integration.
2Reliability
If a dummy structure is added to reduce stress, then reliability improves, but device complexity increases
Solution Approach 1:
The dummy structure is merged with the connection region, forming an integrated structure that serves both as a mechanical stress-relief element and as part of the electrical connection path. This combination reduces overall device complexity by eliminating the need for separate dummy structures while maintaining stress reduction benefits.
Data Source
AI summary
A semiconductor device includes a first and second active regions extending in a first direction and having respective first and second widths in a second direction, the second width greater than the first width, a connection region connected to the first and second active regions and having a third width, between the first and second widths in the second direction, first and second gate structures respectively intersecting the first and second active regions and extending in the second direction, and a dummy structure intersecting at least a portion of the connection region, extending in the second direction, and between the first and second gate structures in the first direction. The dummy structure includes first and second pattern portions spaced apart from a side surface of the first gate structure by respective first and second distances in the first direction, the second distance greater than the first distance.