Semiconductor Transition Region Trenches for Field Profile Control
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Solution Overview
Problem
In semiconductor components like power transistors with trench cells, the off-state electric field boosting and increased field strengths at the edge construction limit the blocking capability and avalanche current, necessitating an improved electric field profile.
Innovation Solution
The semiconductor component features a transition region with trenches that reduce the curvature of equipotential lines from the cell array to the edge region, with trench depths adapted to the body region, and a gate electrode in both regions to control the electric field, including a pn junction and insulation structures for field reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If an edge construction is used to laterally reduce reverse voltage, then the reverse voltage reduction is improved, but the curvature of equipotential lines increases field strength and limits blocking capability
Solution Approach 1:
The edge construction is divided into multiple segments: a first edge construction with a first curvature radius and a second edge construction with a second curvature radius. This segmentation allows different regions to have different field distribution characteristics, reducing the harmful curvature effects while maintaining voltage reduction capability
Solution Approach 2:
Different regions of the edge construction are assigned different curvature radii to optimize local field distribution. The first edge construction has a specific curvature radius optimized for one region, while the second edge construction has a different curvature radius optimized for another region, creating locally optimized field profiles
2Strength
If the edge construction reduces reverse voltage laterally, then voltage distribution is improved, but increased field strengths limit the magnitude of avalanche current
Solution Approach 1:
The edge construction is segmented into multiple regions with different curvature radii, allowing the field strength to be distributed more evenly across different areas rather than concentrated in a single region, thereby reducing peak field strengths
Solution Approach 2:
The edge construction uses controlled curvatures with specific radius ratios to shape the electric field distribution. By optimizing the curvature radii of different edge segments, the field lines are redistributed to reduce concentration and peak field strengths
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces electric field strength and enhances the blocking capability and avalanche current handling, providing a more advantageous electric field profile for the off-state and breakdown conditions.
Implementation Method 1
the edge construction serves for laterally reducing a reverse voltage
Implementation Method 2
a gate electrode is formed in the cell array trench and in at least one trench in the transition region
Implementation Method 3
a transition region with at least one trench is formed between the cell array region and the edge region... By using the at least one trench in the transition region it is possible to reduce a curvature of the equipotential lines
Data Source
AI summary
A semiconductor component is disclosed. One embodiment provides a semiconductor component including a semiconductor body having a cell array region with trenches and an edge region with pn junction. A transition region with at least one trench is formed between the cell array region and the edge region.