Semiconductor Treatment Composition for Tungsten Wire Protection
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Solution Overview
Problem
Current semiconductor treatment methods after chemical mechanical polishing (CMP) face challenges in effectively removing contaminants from surfaces with minimal damage to metal wires, particularly tungsten wires, as iron ions from CMP slurries easily adsorb and cause contamination, leading to etching and damage when using conventional cleaning agents like diluted hydrofluoric acid.
Innovation Solution
A semiconductor treatment composition comprising potassium, sodium, and a compound A, with specific ratios and viscosity, is used to create a cleaning agent that effectively removes contaminants while minimizing damage, including the use of a water-soluble polymer and organic acid to reduce corrosion and enhance etching capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If diluted hydrofluoric acid is used to remove iron contaminants from the polished surface, then iron contamination is effectively removed, but the polished surface is easily etched and damaged
Solution Approach 1:
The invention changes the chemical parameters of the treatment composition by using a neutral to alkaline pH range (pH 7-14) instead of acidic conditions, and specifically controls the oxidizing agent concentration at 1-100 ppm to enable effective iron removal through oxidation and adsorption mechanisms without causing etching damage to the polished surface
Solution Approach 2:
The invention introduces an intermediary mechanism where alumina particles (0.1-10 μm) serve as adsorption media to capture oxidized iron contaminants, and the treatment composition acts as a mediator that facilitates iron removal through controlled oxidation and adsorption rather than direct acid etching
2Object-affected harmful factors
If conventional cleaning agents are used to remove contaminants, then cleaning effectiveness is achieved, but damage to metal wires increases
Solution Approach 1:
The invention changes the pH parameter to neutral or alkaline range and controls the oxidizing agent concentration at 1-100 ppm, which enables effective contaminant removal while preventing excessive etching and damage to metal wires such as tungsten and copper, thereby maintaining wire integrity and reliability
Solution Approach 2:
The invention converts the harmful effect of oxidizing agents that could damage metal wires into a beneficial mechanism by using controlled oxidation to transform iron contaminants into forms that can be adsorbed and removed by alumina particles, thus protecting the metal wires while effectively removing contaminants
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment composition achieves excellent filtration characteristics, reduces damage to metal wires, and efficiently removes contaminants from the surface, maintaining the integrity and electrical properties of the semiconductor circuit while reducing the risk of corrosion and etching.
Implementation Method 1
a CMP slurry that includes iron nitrate and an additional oxidizing agent (e.g., hydrogen peroxide and potassium iodate) is used. Since an iron ion included in the CMP slurry is easily adsorbed on the surface of the polishing target
Implementation Method 2
an iron ion included in the CMP slurry is easily adsorbed on the surface of the polishing target
Implementation Method 3
Iron can be removed by treating the polished surface using diluted hydrofluoric acid. In this case, however, the polished surface is easily etched and damaged
Data Source
AI summary
A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content MK (ppm) and a sodium content MNa (ppm) that satisfy MK/MNa=1×10−1 to 1×104.