Semiconductor Treatment Liquid for Metal Particle Suppression
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Solution Overview
Problem
In semiconductor manufacturing, the formation of particles containing metal atoms during the development or rinsing steps of lithographic processes can hinder the creation of fine patterns required for advanced integrated circuits, as these particles can affect the quality and precision of the pattern formed.
Innovation Solution
A treatment liquid comprising a quaternary ammonium compound, surfactants, and specific metal atoms is used, with controlled ratios and concentrations to minimize the formation of particulate metal, thereby reducing defects and improving pattern formation. This liquid is employed in the development and rinsing steps, utilizing a quaternary ammonium compound, anionic, nonionic, or cationic surfactants, and chelating agents to manage metal atom distribution and aggregation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional development and rinsing processes are used in lithography, then the manufacturing process can be completed, but metal-containing particles are formed that degrade pattern quality
Solution Approach 1:
The invention changes the chemical parameters of the treatment liquid by incorporating specific additives (complexing agents, surfactants, chelating agents) that modify the interaction between metal atoms and the photoresist composition, preventing particle formation while maintaining development and rinsing effectiveness
Solution Approach 2:
The invention introduces intermediary substances (complexing agents and chelating agents) that mediate between metal atoms and the photoresist composition, binding metal atoms in a controlled manner to prevent their aggregation into harmful particles during development and rinsing processes
2Productivity
If ultrafine pattern formation is pursued in submicron regions, then integration density increases, but particle formation has a larger detrimental effect
Solution Approach 1:
The invention modifies the chemical composition parameters of the treatment liquid to include specific concentrations of complexing agents and surfactants that are optimized for ultrafine pattern processing, creating a chemical environment that suppresses particle formation at the submicron scale where pattern features are most vulnerable
3Ease of manufacture
If metal atoms are present in the treatment liquid for development and rinsing, then the process can proceed, but particle formation occurs that affects pattern excellence
Solution Approach 1:
The invention uses complexing agents and chelating agents as intermediary substances that bind to metal atoms in the treatment liquid, preventing them from aggregating into particles while allowing the development and rinsing processes to proceed normally with standard equipment and procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of this treatment liquid effectively reduces the formation of metal-containing particles, enhancing the formation of excellent patterns by minimizing defects and improving the precision and quality of semiconductor devices, particularly in the submicron and quarter micron regions.
Implementation Method 1
at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant
Implementation Method 2
a chelating agent to manage metal atom distribution and aggregation
Data Source
AI summary
A method for manufacturing an electronic device, the method including performing a treatment using a treatment liquid for manufacturing a semiconductor, the treatment liquid for manufacturing a semiconductor includes: a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; water; and one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A ratio T1 of a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms is in a range from 1 ppt to 1 ppm.